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International Rectifier Electronic Components Datasheet

IRFB3256PbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFB3256PbF pdf
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97727
IRFB3256PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.7mΩ
3.4mΩ
206A
S ID (Package Limited)
75A
D
DS
G
TO-220AB
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
dEAS Single Pulse Avalanche Energy (Thermally Limited)
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
ijJunction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
D
Drain
S
Source
Max.
206
172
75
820
300
2.0
± 20
3.3
-55 to + 175
300 (1.6mm from case)
x x10lbf in (1.1N m)
340
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
09/22/11


International Rectifier Electronic Components Datasheet

IRFB3256PbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFB3256PbF pdf
IRFB3256PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
Min.
60
–––
–––
2.0
88
RG Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
–––
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
Ciss Input Capacitance
–––
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
Coss eff. (TR) Effective Output Capacitance (Time Related) –––
Typ.
–––
29
2.7
–––
–––
0.79
–––
–––
–––
–––
Typ.
130
31
42
88
22
77
55
64
6600
720
400
1080
1400
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
™––– mV/°C Reference to 25°C, ID = 1.0mA
f3.4 mΩ VGS = 10V, ID = 75A
4.0 V VDS = VGS, ID = 150μA
––– S VDS = 25V, ID = 75A
––– Ω
20
250
100
-100
μA VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Max. Units
Conditions
195 nC ID = 75A
f––– VDS = 30V
––– VGS = 10V
––– ID = 75A, VDS =0V, VGS = 10V
––– ns VDD = 39V
––– ID = 75A
f––– RG = 2.7Ω
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 48V
––– ƒ = 1.0 MHz, See Fig. 5
h––– VGS = 0V, VDS = 0V to 48V , See Fig. 11
g––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 206 A MOSFET symbol
D
––– ––– 820
showing the
A integral reverse
G
––– ––– 1.3
fp-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
S
––– 43 ––– ns TJ = 25°C
VR = 51V,
––– 53 –––
TJ = 125°C
––– 58 ––– nC TJ = 25°C
fIF = 75A
di/dt = 100A/μs
––– 65 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 50Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD 75A, di/dt 890A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
2
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ Rθ is measured at TJ approximately 90°C.
ˆ RθJC value shown is at time zero.
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Part Number IRFB3256PbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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