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International Rectifier Electronic Components Datasheet

IRFH5304PBF Datasheet

HEXFET Power MOSFET

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IRFH5304PBF pdf
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
4.5 mΩ
16 nC
79 A
Applications
Control MOSFET for buck converters
Features and Benefits
Features
Low charge (typical 16nC)
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5304PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5304TRPBF
IRFH5304TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ T C(Bottom) = 25°C
ID @ T C(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
22
17
79
50
320
3.6
46
0.029
-55 to + 150
Notes  through † are on page 8
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Un it s
V
A
W
W/°C
°C
May 14, 2014


International Rectifier Electronic Components Datasheet

IRFH5304PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5304PBF pdf
IRFH5304PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
Typ.
–––
0.02
3.8
5.8
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
1.8
-6.6
–––
–––
IGSS
Gate-to-Source Forward Leakage
––– –––
Gate-to-Source Reverse Leakage
––– –––
gfs Forward Transconductance
88 –––
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 41
––– 16
––– 3.6
––– 2.7
––– 5.8
––– 3.9
––– 8.5
––– 9.8
––– 1.2
––– 13
––– 25
––– 12
––– 6.6
––– 2360
––– 510
––– 220
Max. Units
Conditions
–––
–––
4.5
6.8
2.35
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 47A
VGS = 4.5V, ID = 47A
V
mV/°C
VDS
=
VGS,
ID
=
50μA
5.0
150
100
-100
–––
–––
24
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 47A
nC VGS = 10V, VDS = 15V, ID = 49A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 47A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 47A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
46
47
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 79
––– ––– 320
––– 0.71 –––
––– ––– 1.0
––– 19 29
––– 44 66
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 5A, VGS = 0V
eV TJ = 25°C, IS = 47A, VGS = 0V
ns TJ = 25°C, IF = 47A, VDD = 15V
nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.7
15
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 14, 2014


Part Number IRFH5304PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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International Rectifier
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