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International Rectifier Electronic Components Datasheet

IRFH5306PBF Datasheet

HEXFET Power MOSFET

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IRFH5306PBF pdf
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
8.1
7.8
1.4
44
Applications
Control MOSFET for buck converters
V
m
nC
A
IRFH5306PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Fe a ture s
Low charge (typical 7.8nC)
Low thermal resistance to PCB (< 4.9°C/W)
100% Rg tested
Low profile (< 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
results in
Be ne fi ts
Lower switching losses
Increased power density
Increased reliability
Increased power density
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Orderable part number
Package Type
IRFH5306TRPBF
IRFH5306TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
±20
15
13
44
28
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 8
1 www.irf.com © 2014 International Rectifier
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January 20, 2014


International Rectifier Electronic Components Datasheet

IRFH5306PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5306PBF pdf
IRFH5306PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
6.9
11
1.8
-6.4
–––
–––
–––
–––
–––
7.8
1.8
1.1
3.0
1.9
4.1
4.9
1.4
9.0
26
9.1
6.1
1125
230
102
–––
–––
8.1
13.3
2.35
–––
5.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C
m
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 15A
eVGS = 4.5V, ID = 15A
V
mV/°C
VDS =
VGS, ID
=
25µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 15A
VDS = 15V
nC VGS = 4.5V
ID = 15A
See Fig.17 & 18
nC VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns ID = 15A
RG=1.8
See Fig.15
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
46
15
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 44
––– –––
––– –––
––– 17
––– 18
60
1.0
26
27
MOSFET symbol
A showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 15A, VGS = 0V
ns TJ = 25°C, IF = 15A, VDD = 15V
nC di/dt = 200A/µs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
4.9
24
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 20, 2014


Part Number IRFH5306PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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International Rectifier
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