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International Rectifier Electronic Components Datasheet

IRFN150 Datasheet

POWER MOSFET

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IRFN150 pdf
PD - 91547C
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN150
0.07
ID
34A
IRFN150
JANTX2N7224U
JANTXV2N7224U
REF:MIL-PRF-19500/592
100V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
34
21
136
150
1.2
±20
150
34
15
5.5
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
1/28/02


International Rectifier Electronic Components Datasheet

IRFN150 Datasheet

POWER MOSFET

No Preview Available !

IRFN150 pdf
IRFN150
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
9.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.13 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.07
— 0.081
— 4.0
——
— 25
— 250
— 100
— -100
— 125
— 22
— 65
— 35
— 190
— 170
— 130
4.0 —
3700
1100
200
V
S( )
µA
nA
nC
ns
nH
pF
VGS = 10V, ID = 21A
VGS = 10V, ID = 34A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 21A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 34A
VDS = 50V
VDD = 50V, ID = 34A,
VGS =10V, RG = 2.35
Measured from the center of drain
pad to center of source pad.
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
34
136
A
VSD Diode Forward Voltage
— — 1.8 V
trr Reverse Recovery Time
— — 500 nS
QRR Reverse Recovery Charge
— — 2.9 µC
Tj = 25°C, IS = 34A, VGS = 0V
Tj = 25°C, IF = 34A, di/dt 100A/µs
VDD 30V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
— — 0.83
°C/W
— 3.0 —
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com


Part Number IRFN150
Description POWER MOSFET
Maker International Rectifier
Total Page 7 Pages
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