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International Rectifier Electronic Components Datasheet

IRFN250 Datasheet

POWER MOSFET N-CHANNE

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Provisional Data Sheet No. PD-9.1549
HEXFET® POWER MOSFET
IRFN250
N-CHANNEL
200 Volt, 0.100HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-stateresistancecom-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Product Summary
Part Number
BVDSS
IRFN250
200V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
0.100
ID
27.4A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN250
27.4
17
110
150
1.2
±20
500
27.4
15.0
5.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g
To Order


International Rectifier Electronic Components Datasheet

IRFN250 Datasheet

POWER MOSFET N-CHANNE

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IRFN250 pdf
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IRFN250 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
2.0
9.0
55
8.0
30
Typ. Max. Units
——
V
0.29 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.100
— 0.105
— 4.0
——
— 25
— 250
— 100
— -100
— 115
— 22
— 60
— 35
— 190
— 170
— 130
2.0 —
6.5 —
3500
700
110
V
S( )
µA
nA
nC
ns
VGS = 10V, ID = 17A 
VGS = 10V, ID = 27.4A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 17A 
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 27.4A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 100V, ID = 27.4A,
RG = 2.35, VGS= 10V
see figure 10
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 27.4 A Modified MOSFET symbol showing the
— — 110
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB Junction-to-PC Board
— — 1.9 V
Tj = 25°C, IS = 27.4A, VGS = 0V 
— — 950 ns Tj = 25°C, IF = 27.4A, di/dt 100A/µs
— — 9.0 µC
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.83
Test Conditions
— TBD — K/W Soldered to a copper clad PC board
To Order


Part Number IRFN250
Description POWER MOSFET N-CHANNE
Maker International Rectifier
Total Page 6 Pages
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