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International Rectifier Electronic Components Datasheet

IRFN3710 Datasheet

TRANSISTOR N-CHANNEL

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Provisional Data Sheet No. PD-9.1417
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRFN3710
N-CHANNEL
100 Volt, 0.028, HEXFET
Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design for which HEXFETs
are well known, provides the designer with an ex-
tremely efficient device for use in a wide variety of
applications.
The Surface Mount Device 1 (SMD-1) package rep-
resents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
give designers the extra flexibility they need to in-
crease circuit board density.International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
Product Summary
Part Number
IRFN3710
BVDSS
100V
Features:
n Surface Mount
n Small Footprint
n Alternative to TO-3 Package
n Hermetically Sealed
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Lightweight
RDS(on)
0.028
ID
45A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRFN3710
45
28
180
125
1.0
±20
690
27
12.5
5.0
-55 to 150
300 (for 5 sec.)
2.6 (typical)
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
oC
g


International Rectifier Electronic Components Datasheet

IRFN3710 Datasheet

TRANSISTOR N-CHANNEL

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IRFN3710 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
100
BVDSS/TJ Temp. Coefficient of Breakdown Voltage —
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs Forward Transconductance
24
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Typ. Max. Units
Test Conditions
——
V
VGS = 0V, ID = 1.0 mA
0.120 — V/°C
— 0.028
— 0.032
— 4.0 V
— — S( )
— 25 µA
— 250
— 100 nA
— -100
— 190
— 26 nC
— 82
Reference to 25°C, ID = 1.0 mA
VGS = 12V, ID =28A „
VGS = 12V, ID = 45A
VDS = VGS, ID = 250 mA
VDS > 15V, IDS = 28A „
VDS=0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID =45 A
VDS = Max. Rating x 0.5
14 —
59 —
58 —
ns
VDD = 50V, ID =45A,
RG = 4.3
48 —
8.7 —
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
LS Internal Source Inductance
— 8.7 — nH Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 3000 —
— 640 —
— 330 —
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
To Order


Part Number IRFN3710
Description TRANSISTOR N-CHANNEL
Maker International Rectifier
Total Page 4 Pages
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