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International Rectifier Electronic Components Datasheet

IRFR3505PbF Datasheet

Power MOSFET

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IRFR3505PbF pdf
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
PD - 95511B
IRFR3505PbF
IRFU3505PbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.013
S ID = 30A
D-Pak
IRFR3505PbF
I-Pak
IRFU3505PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
71
49
30
280
140
0.92
± 20
210
410
See Fig.12a, 12b, 15, 16
4.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
RθJC
RθJA
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
40
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
09/27/10


International Rectifier Electronic Components Datasheet

IRFR3505PbF Datasheet

Power MOSFET

No Preview Available !

IRFR3505PbF pdf
IRFR/U3505PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
55 ––– ––– V
––– 0.057 ––– V/°C
––– 0.011 0.013
2.0 ––– 4.0 V
41 ––– ––– S
––– ––– 20
––– ––– 250
µA
––– ––– 200
––– ––– -200
nA
––– 62 93
––– 17 26 nC
––– 22 33
––– 13 –––
–––
–––
74 –––
43 –––
ns
––– 54 –––
––– 4.5 –––
––– 7.5 –––
––– 2030 –––
––– 470 –––
––– 91 –––
––– 2600 –––
––– 330 –––
––– 630 –––
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 30A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 30A
VDS = 44V
VGS = 10V„
VDD = 28V
ID = 30A
RG = 6.8
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 71
––– ––– 280
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 30A, VGS = 0V „
––– 70 105 ns TJ = 25°C, IF = 30A, VDD = 28V
––– 180 270 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ˆ are on page 11
2
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Part Number IRFR3505PbF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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