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International Rectifier Electronic Components Datasheet

IRFS4620PBF Datasheet

N-Channel HEXFET Power MOSFET

No Preview Available !

IRFS4620PBF pdf
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -96203
IRFS4620PbF
IRFSL4620PbF
HEXFET® Power MOSFET
D VDSS
200V
:RDS(on) typ. 63.7m
max. 77.5m:
S ID
24A
DD
S
G
D2Pak
IRFS4620PbF
S
GD
TO-262
IRFSL4620PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
wwPwD.D@atTaCSh=ee2t54°UC.com Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
www.irf.com
G
Gate
D
Drain
S
Source
Max.
24
17
100
144
0.96
± 20
54
-55 to + 175
300
113
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
1.045
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/18/08


International Rectifier Electronic Components Datasheet

IRFS4620PBF Datasheet

N-Channel HEXFET Power MOSFET

No Preview Available !

IRFS4620PBF pdf
IRFS/SL4620PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Min.
200
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
37
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
gCoss eff. (TR) Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.23
63.7
–––
–––
–––
–––
–––
2.6
Typ.
–––
25
8.2
7.9
17
13.4
22.4
25.4
14.8
1710
125
30
113
317
Max. Units
Conditions
–––
–––
77.5
5.0
20
250
100
-100
V VGS = 0V, ID = 250µA
™V/°C Reference to 25°C, ID = 5mA
fmVGS = 10V, ID = 15A
V VDS = VGS, ID = 100µA
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 15A
38 ID = 15A
f–––
–––
nC
VDS = 100V
VGS = 10V
––– ID = 15A, VDS =0V, VGS = 10V
––– VDD = 130V
f–––
–––
ns
ID = 15A
RG = 7.3
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
h––– VGS = 0V, VDS = 0V to 160V (See Fig.11)
g––– VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
wwIwSM.DataSheet4UP.cuolmsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 100
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
fV TJ = 25°C, IS = 15A, VGS = 0V
D
S
–––
–––
78
99
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
294
432
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 15A
di/dt = 100A/µs
––– 7.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 15A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 15A, di/dt 634A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C
2 www.irf.com


Part Number IRFS4620PBF
Description N-Channel HEXFET Power MOSFET
Manufacturer International Rectifier
Total Page 10 Pages
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