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International Rectifier Electronic Components Datasheet

IRFSL4321PBF Datasheet

HEXFET Power MOSFET

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IRFSL4321PBF pdf
PD - 97105B
IRFS4321PbF
IRFSL4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15m:
85A c
DD
S
D
G
S
GD
D2Pak
TO-262
IRFS4321PbF IRFSL4321PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
RθJC Junction-to-Case g
RθJA Junction-to-Ambient g
Max.
85 c
60
330
350
2.3
±30
120
-55 to + 175
300
Typ.
–––
–––
Max.
0.43*
40
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through … are on page 2
www.irf.com
1
1/26/10


International Rectifier Electronic Components Datasheet

IRFSL4321PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFSL4321PBF pdf
IRFS_SL4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
130
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
150
12
–––
–––
–––
–––
–––
0.8
Typ.
–––
71
24
21
18
60
25
35
4460
390
82
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mAd
15 mΩ VGS = 10V, ID = 33A f
5.0 V VDS = VGS, ID = 250μA
20 μA VDS = 150V, VGS = 0V
1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
––– Ω
Max. Units
Conditions
––– S VDS = 25V, ID = 50A
110 nC ID = 50A
––– VDS = 75V
––– VGS = 10V f
––– ns VDD = 75V
––– ID = 50A
––– RG = 2.5Ω
––– VGS = 10V f
––– pF VGS = 0V
––– VDS = 25V
––– ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) d
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 85c A MOSFET symbol
––– ––– 330
showing the
A integral reverse
G
––– ––– 1.3
––– 89 130
––– 300 450
––– 6.5 –––
p-n junction diode.
V TJ = 25°C, IS = 50A, VGS = 0V f
ns ID = 50A
nC VR = 128V,
A di/dt = 100A/μs f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.096mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
„ Pulse width 400μs; duty cycle 2%.
… Rθ is measured at TJ approximately 90°C
2 www.irf.com


Part Number IRFSL4321PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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