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International Rectifier Electronic Components Datasheet

IRFU4615PBF Datasheet

Power MOSFETs

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IRFU4615PBF pdf
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
max. 42m:
S ID
33A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
DD
S
G
DPak
IRFR4615PbF
S
D
G
IPAK
IRFU4615PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Package Type
D-PAK
I-PAK
Standard Pack
Form
Tube/Bulk
Tape and Reel Left
Tube/Bulk
Quantity
75
3000
75
Orderable Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through ˆ are on page 11
Max.
33
24
140
144
0.96
± 20
38
-55 to + 175
300
109
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
May 16, 2013


International Rectifier Electronic Components Datasheet

IRFU4615PBF Datasheet

Power MOSFETs

No Preview Available !

IRFU4615PBF pdf
IRFR/U4615PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
35
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
gCoss eff. (TR) Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.19
34
–––
–––
–––
–––
–––
2.7
Typ.
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
Max. Units
Conditions
–––
–––
42
5.0
20
250
100
-100
V VGS = 0V, ID = 250μA
™V/°C Reference to 25°C, ID = 5mA
fmΩ VGS = 10V, ID = 21A
V VDS = VGS, ID = 100μA
μA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
––– Ω
Max. Units
Conditions
––– S VDS = 50V, ID = 21A
ID = 21A
f–––
–––
nC
VDS = 75V
VGS = 10V
––– ID = 21A, VDS =0V, VGS = 10V
––– VDD = 98V
f–––
–––
ns
ID = 21A
RG = 7.3Ω
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
h––– VGS = 0V, VDS = 0V to 120V (See Fig.11)
g––– VGS = 0V, VDS = 0V to 120V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 33
––– ––– 140
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
fV TJ = 25°C, IS = 21A, VGS = 0V
D
S
–––
–––
70
83
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
177
247
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 21A
di/dt = 100A/μs
––– 4.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier
May 16, 2013


Part Number IRFU4615PBF
Description Power MOSFETs
Maker International Rectifier
Total Page 11 Pages
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