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International Rectifier Electronic Components Datasheet

IRGIB7B60KD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRGIB7B60KD pdf
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PD - 94620B
IRGIB7B60KDINSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
G
E
n-channel
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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Max.
600
12
8.0
24
24
9.0
6.0
18
2500
±20
39
20
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.8
6.0
–––
62
–––
Units
°C/W
g
1
09/17/03


International Rectifier Electronic Components Datasheet

IRGIB7B60KD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRGIB7B60KD pdf
IRGIB7B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Ref.Fig.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.57 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.8 2.2
IC = 8.0A, VGE = 15V, TJ = 25°C
5,6,7
VCE(on)
Collector-to-Emitter Voltage
— 2.2 2.5 V IC = 8.0A, VGE = 15V, TJ = 150°C
9,10,11
— 2.3 2.5
IC = 8.0A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
VGE(th)/TJ Threshold Voltage temp. coefficient
— -9.5 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
12
gfe Forward Transconductance
— 3.7 — S VCE = 50V, IC = 8.0A, PW = 80µs
— 1.0 150
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— 200 500 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 720 1100
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.25 1.45 V IF = 5.0A, VGE = 0V
8
— 1.20 1.40
IF = 5.0A, TJ = 150°C, VGE = 0V
— 1.20 1.30
IF = 5.0A, TJ = 175°C, VGE = 0V
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg Total Gate Charge (turn-on)
— 29 44
IC = 8.0A
23
Qge Gate-to-Emitter Charge (turn-on) — 3.7 5.6 nC VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
— 14 21
VGE = 15V
Eon Turn-On Switching Loss
— 160 268
IC = 8.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
d— 160 268 µJ VGE = 15V, RG = 50, L = 1.1mH
— 320 433
TJ = 25°C
td(on)
Turn-On delay time
— 23 27
IC = 8.0A, VCC = 400V
tr Rise time
— 22 26 ns VGE = 15V, RG = 50, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 140 150
TJ = 25°C
tf Fall time
— 32 42
Eon Turn-On Switching Loss
— 220 330
IC = 8.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
d— 270 381 µJ VGE = 15V, RG = 50, L = 1.1mH
— 490 711
TJ = 150°C
13,15
WF1,WF2
td(on)
Turn-On delay time
— 22 27
IC = 8.0A, VCC = 400V
14,16
tr Rise time
— 21 25 ns VGE = 15V, RG = 50, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 180 198
TJ = 150°C
WF1
tf Fall time
— 40 56
WF2
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 440 660
VGE = 0V
Coes Output Capacitance
— 38 57 pF VCC = 30V
22
Cres Reverse Transfer Capacitance
— 16 24
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 54A, Vp = 600V
4
VCC=500V,VGE = +15V to 0V,RG = 50CT2
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, Vp = 600V, RG = 100
CT3
VCC=360V,VGE = +15V to 0V
WF4
ISC (Peak) Peak Short Circuit Collector Current
— 70 — A
WF4
Erec Reverse Recovery Energy of the Diode — 100 133 µJ TJ = 150°C
17,18,19
trr Diode Reverse Recovery Time
— 95 120 ns VCC = 400V, IF = 8.0A, L = 1.07mH
20,21
Irr
Peak Reverse Recovery Current
— 13 17 A VGE = 15V, RG = 50
CT4,WF3
Qrr
Diode Reverse Recovery Charge
— 620 800 nC di/dt = 500A/µS
Note  to ‚ are on page 12
2 www.irf.com


Part Number IRGIB7B60KD
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 12 Pages
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