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International Rectifier Electronic Components Datasheet

IRHNB7064 Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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IRHNB7064 pdf
PD - 91737A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7064
60V, N-CHANNEL
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNA7064 100K Rads (Si) 0.01575*A
IRHNA3064 300K Rads (Si) 0.01575*A
IRHNA4064 600K Rads (Si) 0.01575*A
IRHNA8064 1000K Rads (Si) 0.01575*A
SMD-3
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
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Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
75*
56 A
300
300 W
2.4 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
75*
30
2.5
-55 to 150
300 ( for 5 sec.)
3.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
*Current is limited by pin diameter
www.irf.com
1
12/12/01


International Rectifier Electronic Components Datasheet

IRHNB7064 Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHNB7064 pdf
IRHNB7064
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60 — — V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.056 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
— — 0.015
— — 0.018
2.0 — 4.0 V
18 — — S ( )
— — 25 µA
— — 250
— — 100 nA
— — -100
— — 260
— — 60 nC
— — 86
VGS = 12V, ID = 56A
VGS = 12V, ID = 75A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 56A
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 75A
VDS = 30V
— — 27
— — 120 ns
— — 76
VDD =30V, ID = 75A
VGS =12V, RG = 2.35
— — 93
— 4.0 — nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 4900 —
— 2800 —
— 860 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
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IS
ISM
VSD
trr
QRR
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
— — 75* A
— — 356
— — 3.0 V
— — 220 nS
— — 3.1 µC
Test Conditions
Tj = 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 75A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
— — 0.42 °C/W
— 1.6 —
Test Conditions
Soldered to a 1” sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Part Number IRHNB7064
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 8 Pages
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