http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

IRHNB7260 Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHNB7260 pdf
PD - 91798A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7260
200V, N-CHANNEL
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7260 100K Rads (Si) 0.070
IRHNB3260 300K Rads (Si) 0.070
IRHNB4260 600K Rads (Si) 0.070
IRHNB8260 1000K Rads (Si) 0.070
ID
43A
43A
43A
43A
SMD-3
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
www.DataSheet4U.com
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
43
27 A
172
300 W
2.4 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
43
30
5.7
-55 to 150
300 (for 5 Sec.)
3.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/7/01


International Rectifier Electronic Components Datasheet

IRHNB7260 Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHNB7260 pdf
IRHNB7260
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.0
9.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
—— V
0.26 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.070
— 0.077
— 4.0 V
— — S( )
— 25 µA
— 250
— 100 nA
— -100
— 290
— 42 nC
— 120
VGS = 12V, ID =27A
VGS = 12V, ID = 43A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 27A
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =43A
VDS = 100V
— 50
— 200 ns
— 200
VDD = 100V, ID =43A
VGS =12V, RG = 2.35
— 130
4.0 — nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 5300 —
— 1200 —
— 360 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
www.DataSheet4U.com
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
43
172
A
VSD Diode Forward Voltage
— — 1.8 V
trr Reverse Recovery Time
— — 820 nS
QRR Reverse Recovery Charge
— — 8.5 µC
Tj = 25°C, IS = 43A, VGS = 0V
Tj = 25°C, IF = 43A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 0.42 °C/W
— 1.6 —
Soldered to a 1” sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com


Part Number IRHNB7260
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 8 Pages
PDF Download
IRHNB7260 pdf
Download PDF File
IRHNB7260 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 IRHNB7260 RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier
International Rectifier
IRHNB7260 pdf
2 IRHNB7264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier
International Rectifier
IRHNB7264SE pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components