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International Rectifier Electronic Components Datasheet

IRHNB7360SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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IRHNB7360SE pdf
PD - 91740B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7360SE
400V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7360SE 100K Rads (Si) 0.20
ID
24A
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
Absolute Maximum Ratings
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Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
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Pre-Irradiation
Units
24
15 A
96
300 W
2.4 W/°C
±20 V
500 mJ
24 A
30 mJ
3.0
-55 to 150
V/ns
oC
300 (for 5 sec.)
3.5 (Typical)
g
1
6/4/01


International Rectifier Electronic Components Datasheet

IRHNB7360SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHNB7360SE pdf
IRHNB7360SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
—
—
—
2.5
4.0
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—— V
0.51 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.20
— 0.21
— 4.5 V
— — S( )
—
—
50
250
µA
— 100
— -100 nA
— 250
— 60 nC
— 120
VGS = 12V, ID = 15A
VGS = 12V, ID = 24A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 15A
VDS= 320V ,VGS=0V
VDS = 320V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 24A
VDS = 200V
— 35
— 100
— 120 ns
VDD =200V, ID =24A,
VGS =12V, RG = 2.35
— 100
4.0 — nH Measured from the center of drain
pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 4000 —
— 1000 —
— 460 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
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Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode)
——
24
96
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.4 V
— — 750 nS
— — 14 µC
Tj = 25°C, IS = 24A, VGS = 0V
Tj = 25°C, IF = 24A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 0.42
— 1.6 — °C/W Soldered to a 2 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com


Part Number IRHNB7360SE
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 8 Pages
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