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International Rectifier Electronic Components Datasheet

IRK27 Datasheet

ADD-A-pak-TM GEN V Power Modules

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IRK27 pdf
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Bulletin I27130 rev. G 10/02
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
IRK.26 SERIES
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
27 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
@ 85°C
IRK.26
27
Units
A
IO(RMS) (*)
ITSM @ 50Hz
IFSM @ 60Hz
I2t @ 50Hz
@ 60Hz
I2t
60
400
420
800
730
8000
A
A
A
A2s
A2s
A2s
VRRM range
TSTG
TJ
(*) As AC switch.
400 to 1600
- 40 to 125
- 40 to125
V
oC
oC
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The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
1


International Rectifier Electronic Components Datasheet

IRK27 Datasheet

ADD-A-pak-TM GEN V Power Modules

No Preview Available !

IRK27 pdf
IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
VRRM , maximum
repetitive
peak reverse voltage
V
400
600
800
VRSM , maximum VDRM , max. repetitive
non-repetitive peak off-state voltage,
peak reverse voltage gate open circuit
VV
500 400
700 600
900 800
IRK.26
10 1000
12 1200
14 1400
1100
1300
1500
1000
1200
1400
16 1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IRK.26
Units Conditions
IT(AV) Max. average on-state
current (Thyristors)
27
180o conduction, half sine wave,
IF(AV) Max. average forward
current (Diodes)
27
TC = 85oC
IO(RMS)
Max. continuous
on-state current.
RMS
As AC switch
ITSM Max. peak, one cycle
or non-repetitive on-state
IFSM or forward current
60
A
or
I(RMS)
I(RMS)
400 t=10ms No voltage
Sinusoidal
420
t=8.3ms reapplied
half wave,
335
t=10ms 100% VRRM
Initial TJ = TJ max.
350 t=8.3ms reapplied
I2t Max. I2t for fusing
470
490
800
t=10ms
t=8.3ms
t=10ms
TJ = 25oC,
no voltage reapplied
No voltage
730
560
A2s
t=8.3ms reapplied
t=10ms 100% VRRM
Initial TJ = TJ max.
510 t=8.3ms reapplied
1100
1000
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
I2t Max. I2t for fusing (1)
VT(TO) Max. value of threshold
voltage (2)
8000
0.92
0.95
A2s
V
t=0.1to10ms,no voltage reappl. TJ=TJ max
Low level (3)
TJ = TJ max
High level (4)
rt Max. value of on-state
slope resistance (2)
VTM Max. peak on-state or
VFM forward voltage
di/dt Max. non-repetitive rate
of rise of turned on
current
IH Max. holding current
12.11
11.82
1.95
150
200
m
V
A/µs
mA
Low level (3)
High level (4)
TJ = TJ max
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = 25oC
TJ = 25oC, from 0.67 VDRM,
ITM =π x ,IT(AV) Ig = 500mA,
tr < 0.5 µs, tp > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL Max. latching current
400
TJ = 25oC, anode supply = 6V, resistive load
(1) I2t for time tx = I2t x tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
2 www.irf.com


Part Number IRK27
Description ADD-A-pak-TM GEN V Power Modules
Maker International Rectifier
Total Page 8 Pages
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