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International Rectifier Electronic Components Datasheet

IRL1404ZPbF Datasheet

MOSFET

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IRL1404ZPbF pdf
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
PD - 95446B
IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 3.1mΩ
G
ID = 120A
S
TO-220AB
D2Pak
TO-262
IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
iCase-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
k200
k140
k120
790
230
1.5
± 16
220
490
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/25/12


International Rectifier Electronic Components Datasheet

IRL1404ZPbF Datasheet

MOSFET

No Preview Available !

IRL1404ZPbF pdf
IRL1404Z/S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
40 ––– –––
V VGS = 0V, ID = 250μA
––– 0.034 –––
––– 2.5 3.1
––– ––– 4.7
––– ––– 5.9
V/°C
mΩ
Reference to 25°C, ID = 1mA
elÃVGS = 10V, ID = 75A
eVGS = 5.0V, ID = 40A
eVGS = 4.5V, ID = 40A
1.4 ––– 2.7
120 ––– –––
V VDS = VGS, ID = 250μA
lS VDS = 10V, ID = 75A
––– ––– 20
μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 200
nA VGS = 16V
––– ––– -200
––– 75 110
VGS = -16V
ID = 75A
––– 28 ––– nC VDS = 32V
––– 40 –––
eVGS = 5.0V
––– 19 –––
––– 180 –––
VDD = 20V
ID = 75A
––– 30 ––– ns RG = 4.0Ω
––– 49 –––
eVGS = 5.0V
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
––– 5080 –––
––– 970 –––
––– 570 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
––– 3310 –––
––– 870 –––
––– 1280 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
fVGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
k––– ––– 200
MOSFET symbol
D
––– ––– 790
––– ––– 1.3
––– 26 39
––– 18 27
A showing the
integral reverse
G
S
p-n junction diode.
l eV TJ = 25°C, IS = 75A , VGS = 0V
lns TJ = 25°C, IF = 75A , VDD = 20V
enC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
† This value determined from sample failure population. 100%
‚ Limited by TJmax, starting TJ = 25°C,
tested to this value in production.
L = 0.079mH, RG = 25Ω, IAS = 75A, VGS =10V.
‡ This is only applied to TO-220AB package.
Part not recommended for use above this value. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
For recommended footprint and soldering techniques
refer to application note #AN-994.
‰ Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
80% VDSS .
current limitations arising from heating of the device leads may
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
occur with some lead mounting arrangements.
repetitive avalanche performance.
Š All AC and DC test condition based on former Package limited
current of 75A.
2 www.irf.com


Part Number IRL1404ZPbF
Description MOSFET
Maker International Rectifier
Total Page 12 Pages
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1 IRL1404ZPbF MOSFET International Rectifier
International Rectifier
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