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International Rectifier Electronic Components Datasheet

IRL2505LPBF Datasheet

HEXFET Power MOSFET

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IRL2505LPBF pdf
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l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL2505S)
l Low-profile through-hole (IRL2505L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for low-
profile applications.
Absolute Maximum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95577
IRL2505LPbF
IRL2505SPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.008
ID = 104A†
S
D 2 Pak
TO-262
Max.
104†
74
360
3.8
200
1.3
±16
500
54
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04


International Rectifier Electronic Components Datasheet

IRL2505LPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRL2505LPBF pdf
IRL2505S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.008
VGS = 10V, ID = 54A „
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.010 VGS = 5.0V, ID = 54A „
––– ––– 0.013
VGS = 4.0V, ID = 45A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
59 ––– ––– S VDS = 25V, ID = 54A…
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
Qg Total Gate Charge
––– ––– 130
ID = 54A
Qgs Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 160 –––
––– 43 –––
ns ID = 54A
RG = 1.3Ω, VGS = 5.0V
tf Fall Time
––– 84 –––
RD = 0.50Ω, See Fig. 10 „…
LS Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss Input Capacitance
––– 5000 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 104†
A
––– ––– 360
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
ƒ ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRL2505 data and test conditions
† Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com


Part Number IRL2505LPBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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