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International Rectifier Electronic Components Datasheet

IRL3502SPBF Datasheet

HEXFET Power MOSFET

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IRL3502SPBF pdf
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l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
G
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V…
Continuous Drain Current, VGS @ 4.5V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95126
IRL3502SPbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.007
S ID = 110A†
D 2 Pak
Max.
110†
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.89
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/18/04


International Rectifier Electronic Components Datasheet

IRL3502SPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRL3502SPBF pdf
IRL3502SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
20 ––– ––– V
––– 0.019 ––– V/°C
––– ––– 0.008
––– ––– 0.007
0.70 ––– ––– V
77 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100 nA
––– ––– -100
––– ––– 110
––– ––– 27 nC
––– ––– 39
––– 10 –––
––– 140 ––– ns
––– 96 –––
––– 130 –––
––– 7.5 ––– nH
––– 4700 –––
––– 1900 –––
––– 640 –––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA…
VGS = 4.5V, ID = 64A „
VGS = 7.0V, ID = 64A „
VDS = VGS, ID = 250µA
VDS = 10V, ID = 64A…
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = 10V
VGS = -10V
ID = 64A
VDS = 16V
VGS = 4.5V, See Fig. 6 „…
VDD = 10V
ID = 64A
RG = 3.8Ω, VGS = 4.5V
RD = 0.15Ω, „…
Between lead,
and center of die contact
VGS = 0V
VDS = 15V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 110†
––– ––– 420
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V „
––– 87 130 ns TJ = 25°C, IF = 64A
––– 200 310 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 190µH
RG = 25, IAS = 64A.
ƒ ISD 64A, di/dt 86A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRL3502 data and test conditions
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.


Part Number IRL3502SPBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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