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International Rectifier Electronic Components Datasheet

IRLML6244TRPbF Datasheet

HEXFET Power MOSFET

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IRLML6244TRPbF pdf
VDS
VGS Max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
20
±12
21.0
27.0
V
V
m
m
PD - 97535A
IRLML6244TRPbF
HEXFET® Power MOSFET
*
6
'
Micro3TM (SOT-23)
IRLML6244TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Low RDS(on) ( < 21m)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
results in
Benefits
Lower conduction losses
Multi-vendor compatibility
Environmentally friendly
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
20
6.3
5.1
32
1.3
0.80
0.01
± 12
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
03/09/12


International Rectifier Electronic Components Datasheet

IRLML6244TRPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRLML6244TRPbF pdf
IRLML6244TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 7.8 ––– mV/°C Reference to 25°C, ID = 1mA
ddRDS(on)
Static Drain-to-Source On-Resistance
–––
–––
16.0
22.0
21.0
27.0
m
VGS = 4.5V, ID = 6.3A
VGS = 2.5V, ID = 5.1A
VGS(th)
Gate Threshold Voltage
0.5 0.9 1.1
V VDS = VGS, ID = 10μA
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
μA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 12V
VGS = -12V
RG Internal Gate Resistance
––– 1.7 –––
gfs Forward Transconductance
17 ––– –––
S VDS = 10V, ID = 6.3A
Qg Total Gate Charge
––– 8.9 –––
ID = 6.3A
Qgs Gate-to-Source Charge
––– 0.68 ––– nC VDS =10V
dQgd
Gate-to-Drain ("Miller") Charge
––– 4.4 –––
VGS = 4.5V
dtd(on) Turn-On Delay Time
––– 4.9 –––
VDD =10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 7.5
––– 19
–––
–––
ns
ID = 1.0A
RG = 6.8
tf Fall Time
––– 12 –––
VGS = 4.5V
Ciss Input Capacitance
––– 700 –––
VGS = 0V
Coss Output Capacitance
––– 140 ––– pF VDS = 16V
Crss
Reverse Transfer Capacitance
––– 98 –––
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 1.3
––– ––– 32
––– ––– 1.2
––– 12 18
––– 5.1 7.7
MOSFET symbol
D
A
showing the
integral reverse
G
S
dp-n junction diode.
V TJ = 25°C, IS = 6.3A, VGS = 0V
dns TJ = 25°C, VR = 15V, IF=1.3A
nC di/dt = 100A/μs
2 www.irf.com


Part Number IRLML6244TRPbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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International Rectifier
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