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International Rectifier Electronic Components Datasheet

IRLML6302PBF Datasheet

HEXFET Power MOSFET

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IRLML6302PBF pdf
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l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient „
PD - 94947A
IRLML6302PbF
HEXFET® Power MOSFET
D
VDSS = -20V
G
RDS(on) = 0.60
S
Micro3
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Typ.
–––
Max.
230
Units
°C/W
08/25/05


International Rectifier Electronic Components Datasheet

IRLML6302PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRLML6302PBF pdf
IRLML6302PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -4.9 ––– mV/°C Reference to 25°C, ID = -1mA
RDS(ON)
Static Drain-to-Source On-Resistance
––– ––– 0.60
––– ––– 0.90
VGS = -4.5V, ID = -0.61A ƒ
VGS = -2.7V, ID = -0.31A ƒ
VGS(th)
Gate Threshold Voltage
-0.70 ––– -1.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
0.56 ––– ––– S VDS = -10V, ID = -0.31A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg Total Gate Charge
––– 2.4 3.6
ID = -0.61A
Qgs Gate-to-Source Charge
––– 0.56 0.84 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge
––– 1.0 1.5
VGS = -4.5V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
––– 13 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 18 –––
––– 22 –––
ns
ID = -0.61A
RG = 6.2
tf Fall Time
––– 22 –––
RD = 16Ω, See Fig. 10 ƒ
Ciss Input Capacitance
––– 97 –––
VGS = 0V
Coss Output Capacitance
––– 53 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 28 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -0.54
––– -4.9
––– -1.2
35 53
26 39
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -0.61A, VGS = 0V ƒ
TJ = 25°C, IF = -0.61A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD -0.61A, di/dt 76A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 5sec.
D
S


Part Number IRLML6302PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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