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International Rectifier Electronic Components Datasheet

IRLR120N Datasheet

Power MOSFET

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IRLR120N pdf
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
PD - 91541B
IRLR/U120N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.185
ID = 10A
S
D -P A K
T O -2 52 A A
I-P A K
TO -251AA
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
1
5/11/98


International Rectifier Electronic Components Datasheet

IRLR120N Datasheet

Power MOSFET

No Preview Available !

IRLR120N pdf
IRLR/U120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.185
VGS = 10V, ID = 6.0A „
––– ––– 0.225 W VGS = 5.0V, ID = 6.0A „
––– ––– 0.265
VGS = 4.0V, ID = 5.0A „
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
3.1 ––– ––– S VDS = 25V, ID = 6.0A†
––– ––– 25
––– ––– 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 20
ID = 6.0A
––– ––– 4.6 nC VDS = 80V
––– ––– 10
VGS = 5.0V, See Fig. 6 and 13 „†
––– 4.0 –––
VDD = 50V
––– 35 ––– ns ID = 6.0A
––– 23 –––
RG = 11Ω, VGS = 5.0V
––– 22 –––
RD = 8.2Ω, See Fig. 10 „†
Between lead,
––– 4.5 ––– nH 6mm (0.25in.)
D
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact…
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 440 –––
––– 97 –––
––– 50 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 10
––– ––– 35
––– ––– 1.3
––– 110 160
––– 410 620
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 6.0A, VGS = 0V „
ns TJ = 25°C, IF =6.0A
nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by „ Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH … This is applied for I-PAK, LS of D-PAK is measured between lead and
RG = 25, IAS = 6.0A. (See Figure 12)
center of die contact
ƒ ISD 6.0A, di/dt 340A/µs, VDD V(BR)DSS, † Uses IRL520N data and test conditions.
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com


Part Number IRLR120N
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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