http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

IRLR8256PBF Datasheet

25V Single N-Channel HEXFET Power MOSFET

No Preview Available !

IRLR8256PBF pdf
www.DataSheet4U.com
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
hRθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
VDSS
25V
PD - 96208
IRLR8256PbF
IRLU8256PbF
HEXFET® Power MOSFET
RDS(on) max Qg
5.7m:
10nC
D
S
G
S
D
G
D-Pak
I-Pak
IRLR8256PbF IRLU8256PbF
G
Gate
D
Drain
S
Source
Max.
25
± 20
81f
57f
325
63
31
0.42
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Typ.
–––
–––
–––
Max.
2.4
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 11
www.irf.com
1
12/19/08


International Rectifier Electronic Components Datasheet

IRLR8256PBF Datasheet

25V Single N-Channel HEXFET Power MOSFET

No Preview Available !

IRLR8256PBF pdf
www.DataSheet4U.com
IRLR/U8256PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
18
4.2
6.7
1.8
-7.2
–––
–––
–––
–––
–––
10
2.3
1.6
3.6
2.6
5.1
9.0
2.5
9.7
46
12
8.5
1470
453
185
Max. Units
Conditions
–––
–––
5.7
8.5
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
V
mV/°C
VDS
=
VGS,
ID
=
25µA
1.0
150
100
-100
–––
15
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 20A
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 20A
––– See Fig. 16
–––
––– nC VDS = 16V, VGS = 0V
3.9
e––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 20A
RG = 1.8
––– See Fig. 14
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
86
20
6.3
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
f––– ––– 81
––– ––– 325
––– ––– 1.0
MOSFET symbol
A
showing the
integral reverse
ep-n junction diode.
V TJ = 25°C, IS = 20A, VGS = 0V
e––– 19 29 ns TJ = 25°C, IF = 20A, VDD = 13V
––– 17 26 nC di/dt = 300A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRLR8256PBF
Description 25V Single N-Channel HEXFET Power MOSFET
Maker International Rectifier
Total Page 11 Pages
PDF Download
IRLR8256PBF pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 IRLR8256PBF 25V Single N-Channel HEXFET Power MOSFET International Rectifier
International Rectifier
IRLR8256PBF pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components