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International Rectifier Electronic Components Datasheet

IRLU024ZPbF Datasheet

Power MOSFET

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IRLU024ZPbF pdf
Features
n Logic Level
n Advanced Process Technology
n Ultra Low On-Resistance
n 175°C Operating Temperature
n Fast Switching
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free
G
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
PD - 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 58m
S ID = 16A
D-Pak
I-Pak
IRLR024ZPbF IRLU024ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case ˆ
iJunction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
16
11
64
35
0.23
± 16
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/01/10


International Rectifier Electronic Components Datasheet

IRLU024ZPbF Datasheet

Power MOSFET

No Preview Available !

IRLU024ZPbF pdf
IRLR/U024ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.053 –––
––– 46 58
––– ––– 80
––– ––– 100
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 9.6A
emVGS = 5.0V, ID = 5.0A
eVGS = 4.5V, ID = 3.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
7.4 ––– ––– S VDS = 25V, ID = 9.6A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Qg Total Gate Charge
––– 6.6 9.9
ID = 5.0A
Qgs Gate-to-Source Charge
––– 1.6 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 3.9 –––
VGS = 5.0V
td(on) Turn-On Delay Time
––– 8.2 –––
VDD = 28V
tr Rise Time
––– 43 –––
ID = 5.0A
td(off)
Turn-Off Delay Time
tf Fall Time
e––– 19 ––– ns RG = 28
––– 16 –––
VGS = 5.0V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 380 –––
––– 62 –––
––– 39 –––
––– 180 –––
––– 50 –––
––– 81 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 16
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 64
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 9.6A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 9.6A, VDD = 28V
––– 11 17 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRLU024ZPbF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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