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International Rectifier Electronic Components Datasheet

IRS2111PBF Datasheet

HALF-BRIDGE DRIVER

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IRS2111PBF pdf
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Data Sheet No. PD60253
IRS2111(S)PbF
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600 V max.
IO+/-
200 mA / 420 mA
VOUT
10 V - 20 V
ton/off (typ.) 750 ns & 150 ns
Deadtime (typ.)
650 ns
Description
The IRS2111 is a high voltage, high speed power MOSFET and
IGBT driver with dependent high and low side referenced out-
put channels designed for half-bridge applications. Proprietary
HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with standard
CMOS outputs. The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-conduction. In-
ternal deadtime is provided to avoid shoot-through in the output
half-bridge. The floating channel can be used to drive an N-
channel power MOSFET or IGBT in the high side configuration
which operates up to 600 V.
Packages
8-Lead PDIP
IRS2111PbF
8-Lead SOIC
IRS21111SPbF
Typical Connection
VCC
VCC
VB
IN IN HO
COM
LO
VS
up to 600 V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1


International Rectifier Electronic Components Datasheet

IRS2111PBF Datasheet

HALF-BRIDGE DRIVER

No Preview Available !

IRS2111PBF pdf
IRS2111(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figs. 7 through 10.
Symbol Definition
Min.
VB
VS
VHO
VCC
VLO
VIN
dVs/dt
PD
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Allowable offset supply voltage transient (Fig. 2)
(8 Lead PDIP)
Package power dissipation @ TA +25°C
(8 lead SOIC)
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
RthJA
Thermal resistance, junction to ambient
(8 lead PDIP)
(8 lead SOIC)
TJ Junction temperature
TS Storage temperature
TL Lead temperature (soldering, 10 seconds)
-55
Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply
Max.
625 (Note 1)
VB + 0.3
VB + 0.3
25 (Note 1)
VCC + 0.3
VCC + 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at a 15 V differential.
Symbol
VB
VS
VHO
VCC
VLO
VIN
TA
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Ambient temperature
Min.
VS + 10
Note 2
VS
10
0
0
-40
Max.
VS + 20
600
VB
20
VCC
VCC
125
Units
V
°C
Note 2: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
www.irf.com
2


Part Number IRS2111PBF
Description HALF-BRIDGE DRIVER
Maker International Rectifier
Total Page 16 Pages
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IRS2111PBF pdf
IRS2111PBF Datasheet PDF
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