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International Rectifier Electronic Components Datasheet

SD203N Datasheet

FAST RECOVERY DIODES Stud Version

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SD203N pdf
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Index
Next DatBaulSlehtineIe2t064/A
FAST RECOVERY DIODES
SD203N/R SERIES
Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-205AB (DO-9)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
200A
Major Ratings and Characteristics
Parameters
SD203N/R
Units
IF(AV)
IF(RMS)
IFSM
I2t
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
200
85
314
4990
5230
125
114
A
°C
A
A
A
KA2s
KA2s
VRRM range
trr range
@ TJ
TJ
400 to 2500
1.0 to 2.0
25
- 40 to 125
V
µs
°C
°C
To Order
case style
DO-205AB (DO-9)


International Rectifier Electronic Components Datasheet

SD203N Datasheet

FAST RECOVERY DIODES Stud Version

No Preview Available !

SD203N pdf
SDPr2e0v3iNo/uRs SDeartiaessheet
Index
Next Data Sheet
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
VRRM max. repetitive
peak and off-state voltage
V
400
SD203N/R..S10
08 800
10 1000
12 1200
SD203N/R..S15
14 1400
16 1600
SD203N/R..S20
20 2000
25 2500
VRSM , maximum non-
repetitive peak voltage
V
500
900
1100
1300
1500
1700
2100
2600
IRRM max.
TJ = 125°C
mA
35
Forward Conduction
Parameter
IF(AV) Max. average forward current
@ Case temperature
IF(RMS) Max. RMS current
IFSM Max. peak, one-cycle
non-repetitive forward current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VF(TO)1 Low level of threshold voltage
VF(TO)2 High level of threshold voltage
rf1 Low level of forward slope resistance
rf2 High level of forward slope resistance
VFM Max. forward voltage
12
SD203N/R Units Conditions
200
85
314
4990
5230
4200
4400
125
114
88
81
1250
1.00
1.47
1.10
0.46
1.65
A 180° conduction, half sine wave.
°C
A DC @ 76°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied Sinusoidal half wave,
KA2s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
Initial TJ = TJ max.
KA2s t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V (I > π x IF(AV)), TJ = TJ max.
m(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
2222222222222
V Ipk= 628A, TJ = 25°C, tp = 400 µs square pulse
Recovery Characteristics
Code
TJ = 25 oC
typical trr
@ 25% IRRM
(µs)
Test conditions
Ipk
Square Pulse
(A)
di/dt
(A/µs)
Vr
(V)
S10 1.0
S15 1.5
750 25 - 30
S20 2.0
To Order
Max. values @ TJ = 125°C
trr
@ 25% IRRM
(µs)
Qrr
(µC)
Irr
(A)
2.4 52 33
2.9 90 44
3.2 107 46


Part Number SD203N
Description FAST RECOVERY DIODES Stud Version
Maker International Rectifier
Total Page 9 Pages
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