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International Rectifier Electronic Components Datasheet

U2703 Datasheet

POWER MOSFET

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U2703 pdf
PD- 91335D
IRLR/U2703
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2703)
l Straight Lead (IRLU2703)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
D
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
VDSS = 30V
RDS(on) = 0.045
ID = 23A…
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
23 …
16
96
45
0.30
± 16
77
14
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
110
I-Pak
TO-251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
7/30/03


International Rectifier Electronic Components Datasheet

U2703 Datasheet

POWER MOSFET

No Preview Available !

U2703 pdf
IRLR/U2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.045
––– ––– 0.065
VGS = 10V, ID = 14A „
VGS = 4.5V, ID = 12A „
1.0 ––– ––– V VDS = VGS, ID = 250µA
6.4 ––– ––– S VDS = 25V, ID = 14A‡
––– ––– 25
––– ––– 250
µA VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 15
ID = 14A
––– ––– 4.6 nC VDS = 24V
––– ––– 9.3
VGS = 4.5V, See Fig. 6 and 13 „‡
––– 8.5 –––
VDD = 15V
––– 140 –––
––– 12 –––
ns ID = 14A
RG = 12Ω, VGS = 4.5V
––– 20 –––
RD = 1.0Ω, See Fig. 10 „‡
Between lead,
––– 4.5 ––– nH 6mm (0.25in.)
D
––– 7.5 –––
from package
G
and center of die contact†
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 450 –––
––– 210 –––
––– 110 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5‡
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 23 …
––– ––– 96
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
––– 65 97 ns TJ = 25°C, IF = 14A
––– 140 210 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L =570µH
RG = 25, IAS = 14A. (See Figure 12)
ƒ ISD 14A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
† This is applied for I-PAK, LS of D-PAK is measured
between lead and center of die contact.
‡ Uses IRL2703 data and test conditions.
www.irf.com


Part Number U2703
Description POWER MOSFET
Maker International Rectifier
Total Page 10 Pages
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