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Isahaya Electronics Corporation
Isahaya Electronics Corporation

RT1N441S Datasheet Preview

RT1N441S Datasheet

Transistor

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RT1N441S pdf
RT1N441X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N441X is a one chip transistor
with built-in bias resistor,PNP type is RT1P441X.
FEATURE
www.DataSheet4U.cBoumilt-in bias resistor (R1=47kΩ,R2=47kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
OUTLINE DRAWING
UNIT:mm
RT1N441U
RT1N441C
1.6
0.4 0.8 0.4
2.5
0.5 1.5 0.5
②③
②③
Equivalent circuit
R1
B
(IN)
R2
C
(OUT)
E
(GND)
RT1N441T2
1.21
0.2 0.81
0.2
②③
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N441M
2.1
0.425 1.25 0.425
②③
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N441S
4.0
0.1
0.45
1.27 1.27
①②③
JEITA、JEDEC:-
ISAHAYA:T-USM
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
ISAHAYA ELECTRONICS CORPORATION



Isahaya Electronics Corporation
Isahaya Electronics Corporation

RT1N441S Datasheet Preview

RT1N441S Datasheet

Transistor

No Preview Available !

RT1N441S pdf
RT1N441X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
CBO
EBO
CEO
IN
CM
www.DataSheet4U.com
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N441T2
125(※)
+125
-55~+125
RT1N441U
150
RATING
RT1N441M RT1N441C
50
10
50
40
100
200
200
+150
-55~+150
RT1N441S
450
UNIT
V
V
V
V
mA
mA
mW
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
(BR)CEO
CBO
FE
CE(sat)
I(ON)
I(OFF)
/R
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TEST CONDITION
I C=100μA,RBE=∞
VCB=50V,I E =0
VCE=5V,I C =5mA
I C =10mA,I B =0.5mA
VCE=0.2V,I C =5mA
VCE=5V,I C =100μA
VCE=6V,I E =-10mA
MIN
LIMIT
TYP MAX
UNIT
50 V
0.1 μA
50 -
0.1 0.3
V
1.8 5.0
V
0.8 1.1
V
33 47 61 kΩ
0.9 1.0 1.1
200 MHz
Input on voltage -Collector current
10
VCE=0.2V
1000
DC forward current gain -Collector current
VCE=5V
1 100
0.1
1
10
Collector current IC(mA)
1000
Collector current - Input off voltage
VCE=5V
100
10
1
10
Collector current IC(mA)
100
100
10
0.0
0.4 0.8 1.2 1.6
Input of voltage VI(OFF)(V)
2.0
ISAHAYA ELECTRONICS CORPORATION


Part Number RT1N441S
Description Transistor
Maker Isahaya Electronics Corporation
Total Page 3 Pages
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