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Isahaya Electronics Corporation
Isahaya Electronics Corporation

RT1P141x Datasheet Preview

RT1P141x Datasheet

Transistor

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RT1P141x pdf
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RT1P141X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT1P141X is a one chip transistor
with built-in bias resistor,NPN type is RT1N141X.
FEATURE
・Built-in bias resistor (R1=10kΩ,R2=10kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
OUTLINE DRAWING
UNIT:mm
RT1P141U
RT1P141C
1.6
0.4 0.8 0.4
2.5
0.5 1.5 0.5
②③
②③
Equivalent circuit
R1
B
(IN)
R2
C
(OUT)
E
(GND)
RT1P141S
4.0
0.1
0.45
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1P141M
2.1
0.425 1.25 0.425
②③
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1P141T
0.2 0.8 0.2
②③
1.27 1.27
①②③
JEITA:-
JEDEC:-
①:Emitter
②:Collector
③:Base
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector



Isahaya Electronics Corporation
Isahaya Electronics Corporation

RT1P141x Datasheet Preview

RT1P141x Datasheet

Transistor

No Preview Available !

RT1P141x pdf
www.DataSheet4U.com
RT1P141X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
CBO
EBO
CEO
CM
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1P141T RT1P141U
125(※)
125
+125
-55~+125
RATING
RT1P141M
-50
-10
-50
-100
-200
RT1P141C
150
+150
-55~+150
RT1P141S
450
UNIT
V
V
V
mA
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃)
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL
PARAMETER
(BR)CEO
CBO
FE
CE(sat)
I(ON)
I(OFF)
/R
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
TYPICAL CHARACTERISTICS
TEST CONDITION
I C=-100μA,RBE=∞
VCB=-50V,I E =0
VCE=-5V,I C =-10mA
I C =-10mA,I B =-0.5mA
VCE=-0.2V,I C =-5mA
VCE=-5V,I C =-100μA
VCE=-6V,I E =10mA
MIN
LIMIT
TYP MAX
UNIT
-50 V
-0.1 μA
50 -
-0.1 -0.3
V
-1.5 -3.0
V
-0.8 -1.1
V
7.0 10 13 kΩ
0.9 1.0 1.1
150 MHz
Input On Voltage - Collector Current
-10
DC Forward Gain - Collector Current
1000
100
-1
10
-0.1
-1
-10
Collector Current  I C ( mA )
Collector Current - Input Off Voltage
-100
-1000
1
-1 -10 -100
Collector Current  I C ( mA )
-100
-10
-0 -0.4 -0.8 -1.2 -1.6 -2
Input Off Voltage  V I ( O F F ) ( V )
ISAHAYA ELECTRONICS CORPORATION


Part Number RT1P141x
Description Transistor
Maker Isahaya Electronics Corporation
Total Page 3 Pages
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