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JCET
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DTESDB5V0LED02 Datasheet Preview

DTESDB5V0LED02 Datasheet

ESD Protection Diode

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DTESDB5V0LED02 pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encapsulate Diodes
DTESDB5V0LED02 ESD Protection Diode
DESCRIPTION
The DTESDB5V0LED02 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
WBFBP-02C
(1.0×0.6×0.5)
unit: mm
FEATURES
z Standoff Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z IEC6100044 Level 4 EFT Protection
z This is a PbFree Device
MARKINGEB
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD Voltage
Parameter
Air
Contact
Per Human Body Model
Per Machine Model
Symbol
Limit
±30
±30
16
400
Total Power Dissipation on FR-5 Board (Note 1)
PD 100
Thermal Resistance JunctiontoAmbient
RΘJA
1250
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
V
mW
/W
A,May,2011



JCET
JCET

DTESDB5V0LED02 Datasheet Preview

DTESDB5V0LED02 Datasheet

ESD Protection Diode

No Preview Available !

DTESDB5V0LED02 pdf
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Device
Device
Marking
VRWM
(V)
Max
IR (μA)
@ VRWM
Max
VBR (V) @ IT
(Note 2)
VC
IT
@IPP = 5 A
Min Max mA
V
DTESDB5V0LED02
EB
5.0
1.0
5.8 8.8 1.0
10
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
IPP(A)
Max
11.2
VC (V)
@Max IPP
Max
12.5
C (pF)
Max
30
A,May,2011


Part Number DTESDB5V0LED02
Description ESD Protection Diode
Maker JCET
Total Page 2 Pages
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