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SI2306 Datasheet Preview

SI2306 Datasheet

20V N-Channel Enhancement Mode MOSFET

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SI2306 pdf
20V N-Channel Enhancement Mode MOSFET
Features
VDS (V) = 20 V
ID = 2.8 A
RDS(ON) = 60mΩ @ VGS = 4.5V
RDS(ON) = 70mΩ @ VGS = 2.5V
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2306
D
SOT-23
GS
Millimeter
REF. Min. Max.
REF.
Millimeter
Min. Max .
A 2.70 3.10
G
1.90 REF .
B 2.40
2.80 H 1.00 1.30
C 1.40 1.60 K 0.10
0.20
D 0.35 0.50 J 0.40
-
E 0 0.10
L 0.85
1.15
F 0.45
0.55 M
0° 10°
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter S
ymbol
Ratings
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±12
Drain Current (Note 1)
ID 2.8
Power Dissipation (Note 1)
PD 350
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, for each single die.
Unit
V
A
mW
°C
JinYu
semiconductor
www.htsemi.com
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JinYu
JinYu

SI2306 Datasheet Preview

SI2306 Datasheet

20V N-Channel Enhancement Mode MOSFET

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SI2306 pdf
20V N-Channel Enhancement Mode MOSFET
SI2306
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Sy
mbol
Test Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
OFF CHARACTERISTICS (Note 2)
V(BR)DSS
VGS = 0V, ID = 250uA
IDSS VDS = 20V, VGS = 0V --
IGSS VGS = ±12V, VDS = 0V --
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
ON CHARACTERISTICS (Note 2)
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
GFS VDS =10V, ID = 6A --
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Q
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 8V, VGS = 0V
F = 1.0MHz
QG
QGS
VDS=10V, ID=6A,
VGS=4.5V
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
TD(ON)
VDD = 10V, ID = 1Α,
Turn-Off Delay Time
TD(OFF)
VGEN = 4.5V, RG = 6
Note: 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max
20 25 --
-- 1
-- ±100
0.6 0.76
-- 60
-- 70
5
--
70
80
--
-- 562
-- 106
-- 75
-- 4.86
-- 0.92
-- 1.4
--
--
--
--
--
--
-- 18 --
-- 25 --
Unit
V
uA
nA
V
m
S
pF
nC
ns
Typical Performance Characteristics
10
VGS=2.5,3.0,3.5,4.0,4.5V
8
VGS=2.0V
6
10
8
6
-55oC
25oC
125oC
4
VGS=1.5V
2
VGS=1.0V
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
JinYu
semiconductor
www.htsemi.com


Part Number SI2306
Description 20V N-Channel Enhancement Mode MOSFET
Maker JinYu
Total Page 3 Pages
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