http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





KEC
KEC

BC307 Datasheet Preview

BC307 Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

BC307 pdf
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : BC307 VCEO=-45V.
Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=-6V, IC=-0.1mA, f=1kHz).
For Complementary With NPN type BC237/238/239.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
BC307
Collector-Base Voltage
BC308
BC309
BC307
Collector-Emitter Voltage
BC308
BC309
BC307
Emitter-Base Voltage
BC308
BC309
BC307
Collector Current
BC308
BC309
BC307
Emitter Current
BC308
BC309
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
-50
-30
-30
-45
-25
-20
-5
-5
-5
-100
-100
-50
100
100
50
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
BC307/8/9
EPITAXIAL PLANAR PNP TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
1994. 3. 2
Revision No : 0
1/2



KEC
KEC

BC307 Datasheet Preview

BC307 Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

BC307 pdf
BC307/8/9
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
DC Current Gain
(Note)
BC307
BC308
BC309
ICBO
hFE
Collector-Emitter
Saturation Voltage
BC307
BC308
BC309
VCE(sat)
Base-Emitter
Saturation Voltage
BC307
BC308
BC309
VBE(sat)
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
VBE(ON)
fT
Cob
BC307
Noise Figure
BC308
NF
BC309
TEST CONDITION
VCB=-50V, IE=0
VCE=-5V, IC=-2mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IC=-5mA
IC=-10mA, IB=-0.5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
VCE=-6V, IC=-0.1mA
Rg=10k , f=1kHz
MIN.
-
120
120
180
-
-
-
-
-
-
-0.55
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
200
-
1.0
1.0
0.2
MAX.
-15
460
800
800
-0.6
-0.6
-0.2
-1.0
-1.0
-0.8
-0.7
-
6.0
10
10
3.0
UNIT
nA
V
V
V
MHz
pF
dB
NOTE : According to the Value of hFE the BC307, BC308, BC309 are classified as follows.
CLASSIFICATION
A
BC307
120 220
hFE
BC308
120 220
BC309
-
B
180 460
180 460
180 460
C
-
380 800
380 800
1994. 3. 2
Revision No : 0
2/2


Part Number BC307
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 2 Pages
PDF Download
BC307 pdf
Download PDF File
BC307 pdf
View for Mobile






Related Datasheet

1 BC300 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS CDIL
CDIL
BC300 pdf
2 BC300 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC300 pdf
3 BC301 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS CDIL
CDIL
BC301 pdf
4 BC301 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC301 pdf
5 BC302 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS CDIL
CDIL
BC302 pdf
6 BC302 Bipolar NPN Device Seme LAB
Seme LAB
BC302 pdf
7 BC302 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC302 pdf
8 BC303 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics
Micro Electronics
BC303 pdf
9 BC303 Bipolar PNP Device Seme LAB
Seme LAB
BC303 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components