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KEC
KEC

KMB060N60PA Datasheet Preview

KMB060N60PA Datasheet

Trench MOSFET

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KMB060N60PA pdf
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TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
VDSS= 60V, ID= 60A
Drain-Source ON Resistance :
RDS(ON)=14m (Max.) @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID*
IDP
IS
PD* 25
Tj
Tstg
60
25
60
240
60
150
-55 175
-55 175
V
V
A
A
A
W
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case
RthJC
1.0
/W
Equivalent Circuit
D
KMB060N60PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
G
S
2007. 8. 9
Revision No : 2
1/6



KEC
KEC

KMB060N60PA Datasheet Preview

KMB060N60PA Datasheet

Trench MOSFET

No Preview Available !

KMB060N60PA pdf
KMB060N60PA
MOSFET Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
Static
Drain-Source Breakdown Voltage
BVDSS
Drain Cut-off Current
IDSS
Gate Leakage Current
IGSS
Gate Threshold Voltage
Vth
Drain-Source ON Resistance
Forward Transconductance
Dynamic
RDS(ON)
gFS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Qgs
Qgd
td(on)
tr
td(off)
Turn-Off Fall Time
tr
Note 1) Pulse Test : Pulse width 10 s, Duty Cycle 1%.
Note 2) Essentially Independent of Operating Temperature.
TEST CONDITION
ID=250 A, VGS=0V
VDS=60V, VGS=0V,
VGS= 15V, VDS=0V
VDS=VGS, ID=250 A
VGS=10V, ID=30A
VDS=15V, ID=30A
VDS=25V, VGS=0V, f=1.0MHz
VDS= 48V,
VGS= 10V,
ID=30A
VDD= 30V
ID=30A
RG= 25
(Note1,2)
(Note1,2)
MIN.
60
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
-1 A
- 100 nA
- 4.0 V
11.5 14
20 -
2000
360
125
70
15
20
35
220
55
30
-
-
-
-
-
-
-
-
-
-
pF
nC
ns
DIODE Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Diode Forward Voltage
Reverse Recovery Time
VSD ISD=60A, VGS=0V
Trr VGS=0V, IS=60A, dIF/dt=100A/ s
Marking
MIN.
-
-
TYP.
-
110
MAX.
1.5
-
UNIT
V
1 KMB
060N60P
A 701
2
1 PRODUCT NAME
2 LOT NO
2007. 8. 9
Revision No : 2
2/6


Part Number KMB060N60PA
Description Trench MOSFET
Maker KEC
Total Page 6 Pages
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KMB060N60PA pdf
KMB060N60PA Datasheet PDF
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