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KODENSHI
KODENSHI

MMBT3904EF Datasheet Preview

MMBT3904EF Datasheet

NPN Silicon Transistor

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MMBT3904EF pdf
MMBT3904EF
NPN Silicon Transistor
Descriptions
Small signal application
Switching application
Features
Low collector saturation voltage
Low collector output capacitance
Complementary pair with MMBT3906EF
PIN Connection
1
2
3
Ordering Information
Type NO.
MMBT3904EF
Marking
Package Code
Z
Device Code Year&Week Code
SOT-523F
SOT-523F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
60
40
6
200
150
150
-55~150
Ta=25°C
Unit
V
V
V
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitterbreakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on delay time
Rise time
Storage time
Fall Time
Symbol
BVCBO
BVCEO
BVEBO
ICEX
hFE
VCE(sat)
fT
Cob
td
tr
ts
tf
Test Condition
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCE=30V, VBE=-3V
VCE=1V, IC=10mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0, f=1MHz
VCC=3V, VBE(off)=0.5V
IC=10mA, IB1=1mA
VCC=3V,IC=10mA,
IB1=-IB2=1mA
Min.
60
40
6
-
100
-
300
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Max. Unit
-V
-V
-V
50
300 -
0.3 V
-
4
35
35
200
50
KSD-T5E009-000
1



KODENSHI
KODENSHI

MMBT3904EF Datasheet Preview

MMBT3904EF Datasheet

NPN Silicon Transistor

No Preview Available !

MMBT3904EF pdf
Electrical Characteristic Curves
Fig. 1 PC-Ta
MMBT3904EF
Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
KSD-T5E009-000
2


Part Number MMBT3904EF
Description NPN Silicon Transistor
Manufacturer KODENSHI
Total Page 4 Pages
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MMBT3904EF pdf
MMBT3904EF Datasheet PDF
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