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KODENSHI
KODENSHI

MMBT3906EF Datasheet Preview

MMBT3906EF Datasheet

PNP Silicon Transistor

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MMBT3906EF pdf
MMBT3906EF
PNP Silicon Transistor
Descriptions
Small signal application
Switching application
Features
Low collector saturation voltage
Low collector output capacitance
Complementary pair with MMBT3904EF
Ordering Information
Type NO.
MMBT3906EF
Marking
Y
①②
Device Code Year&Week Code
PIN Connection
1
2
3
SOT-523F
Package Code
SOT-523F
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-40
-40
-5
-200
150
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BVCBO
BVCEO
BVEBO
ICEX
hFE
VCE(sat)
fT
Cob
td
tr
ts
tf
Test Condition
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCE=-30V, VEB=-3V
VCE=-1V, IC=-10mA
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA,
f=100MHz
VCB=-5V, IE=0, f=1MHz
VCC=-3Vdc, VBE(off)=-0.5Vdc,
IC=-10mAdc, IB1=-1mAdc
VCC=-3Vdc,IC=-10mAdc,
IB1=IB2=-1mAdc
Min.
-40
-40
-5
-
100
-
Typ.
-
-
-
-
-
-
Ta=25°C
Max. Unit
-V
-V
-V
-50 nA
300 -
-0.4
V
250 -
- MHz
- - 4.5 pF
- - 35 ns
- - 35 ns
- - 225 ns
- - 75 ns
KSD-T5E010-000
1



KODENSHI
KODENSHI

MMBT3906EF Datasheet Preview

MMBT3906EF Datasheet

PNP Silicon Transistor

No Preview Available !

MMBT3906EF pdf
Electrical Characteristic Curves
Fig. 1 PC-Ta
MMBT3906EF
Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
KSD-T5E010-000
2


Part Number MMBT3906EF
Description PNP Silicon Transistor
Maker KODENSHI
Total Page 4 Pages
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MMBT3906EF pdf
MMBT3906EF Datasheet PDF
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