http://www.datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Kexin
Kexin

KBSS4350T Datasheet Preview

KBSS4350T Datasheet

NPN Transistors

No Preview Available !

KBSS4350T pdf
SMD Type
NPN Transistors
PBSS4350T (KBSS4350T)
Transistors
Features
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
1
3
2
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Repetitive Peak Collector Current (Note.1)
Collector Current - Pulse
Base Current
(Note.2)
Collector Power Dissipation
(Note.3)
(Note.4)
(Note.1 and 2)
(Note.2)
(Note.3)
Thermal Resistance Junction to Ambient
(Note.4)
(Note.1 and 2)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICRP
ICP
IB
PC
RθJA
TJ
Tamb
Tstg
Rating
50
50
5
2
3
5
0.5
300
480
540
1.2
417
260
230
104
150
-65 to 150
-65 to 150
Unit
V
A
mW
W
/W
Note.1: Operated under pulsed conditions: pulse width tp 100 ms; duty cycle δ 0.25.
Note.2: Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Note.3: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2.
Note.4: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm 2.
www.kexin.com.cn 1



Kexin
Kexin

KBSS4350T Datasheet Preview

KBSS4350T Datasheet

NPN Transistors

No Preview Available !

KBSS4350T pdf
SMD Type
NPN Transistors
PBSS4350T (KBSS4350T)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter turn on voltage
Equivalent on-resistance
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 1 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO
VCB= 50 V , IE= 0
VCB= 50 V , IE= 0 ,TJ = 150
IEBO VEB= 5V , IC=0
IC=500 mA, IB=50mA
IC=1 A, IB=50mA
VCE(sat) IC=2 A, IB=100mA (Note.1)
IC=2 A, IB=200mA (Note.1)
IC=3 A, IB=300mA (Note.1)
IC=2 A, IB=100mA (Note.1)
VBE(sat)
IC=3 A, IB=300mA (Note.1)
VBE(on) VCE= 2V, IC= 1 A (Note.1)
RCE(sat) IC=2 A, IB=200mA (Note.1)
VCE= 2V, IC= 100mA
VCE= 2V, IC= 500mA
hFE VCE= 2V, IC= 1 A (Note.1)
VCE= 2V, IC= 2 A (Note.1)
VCE= 2V, IC= 3 A (Note.1)
Cob VCB= 10V, IE=Ie=0,f=1MHz
fT VCE= 5V, IC= 100mA,f=100MHz
Note.1: Pulse test: tp 300 us; δ 0.02.
Transistors
Min Typ Max Unit
50
50 V
5
0.1
50 uA
0.1
80
160
280 mV
260
370
1.1
1.2 V
1.2
130 mΩ
300
300
300
200
100
25 pF
100 MHz
Marking
Marking
ZC*
2 www.kexin.com.cn


Part Number KBSS4350T
Description NPN Transistors
Maker Kexin
Total Page 5 Pages
PDF Download
KBSS4350T pdf
KBSS4350T Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 KBSS4350T NPN Transistors Kexin
Kexin
KBSS4350T pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy