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Kexin
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KO3414 Datasheet Preview

KO3414 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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KO3414 pdf
SMD Type
MOSFIECT
N-Channel Enhancement Mode
Field Effect Transistor
KO3414(AO3414)
Features
VDS (V) = 20V
ID = 4.2A (VGS=4.5V)
RDS(ON) 50m (VGS = 4.5V)
RDS(ON) 63m (VGS = 2.5V)
RDS(ON) 87m (VGS = 1.8V)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
11..BGasae te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
8
Continuous Drain TA=25
Current *1
TA=70
4.2
ID
3.2
Pulsed Drain Current *2
IDM 15
Power Dissipation *1 TA=25
TA=70
1.4
PD
0.9
Themal Resistance.Junction-to-Ambient *1
RthJA
125
Themal Resistance.Junction-to-Case
RthJC
80
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
Unit
V
V
A
W
/W
/W
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Kexin
Kexin

KO3414 Datasheet Preview

KO3414 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

KO3414 pdf
SMD Type
MOSFIECT
KO3414(AO3414)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off FallTime
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
IS
VSD
Testconditons
ID=250ìA, VGS=0V
VDS=16V, VGS=0V
VDS=16V, VGS=0V ,TJ=55
VDS=0V, VGS= 8V
VDS=VGS ID=250ìA
VGS=4.5V, ID=4.2A
VGS=4.5V, ID=4.2A TJ=125
VGS=2.5V, ID=3.7A
VGS=1.8V, ID=3.2A
VGS=4.5V, VDS=5V
VDS=5V, ID=4.2A
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS= =10V, ID=4.2A
VGS=4.5V, VDS=10V, RL=2.7Ù,RGEN=6Ù
IF=4A, dI/dt=100A/ s
IF=4A, dI/dt=100A/ s
IS=1A,VGS=0V
Min Typ Max Unit
20 V
1
A
5
100 nA
0.4 0.6 1
V
41 50
58 70
m
52 63
67 87
15 A
11 S
436 pF
66 pF
44 pF
3
6.2 nC
1.6 nC
0.5 nC
5.5 ns
6.3 ns
40 ns
12.7 ns
12.3 ns
3.5 nC
2A
0.76 1
V
2 www.kexin.com.cn
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Part Number KO3414
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Kexin
Total Page 2 Pages
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