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LGE
LGE

DTC114EE Datasheet Preview

DTC114EE Datasheet

NPN Digital Transistor

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DTC114EE pdf
DTC114EE/DTC114EUA/DTC114ECA
DTC114EKA/DTC114ESA
Digital Transistor(NPN)
Features
1. Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow
negative biasing of the input.They also have the advantage of almost
completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design
easy.
PIN CONNENCTIONS AND MARKING
DTC114EE
DTC114EUA
SOT-523
Addreviated symbol: 24
Addreviated symbol: 24
DTC114EKA
SOT-23
SOT-23-3L
Addreviated symbol: 24
DTC114ESA
SOT-323
Addreviated symbol: 24
DTAC111144EECCAA
SOT-23
Addreviated symbol: 24
TO-92S



LGE
LGE

DTC114EE Datasheet Preview

DTC114EE Datasheet

NPN Digital Transistor

No Preview Available !

DTC114EE pdf
Absolute maximum ratings(Ta=25)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT
E
150
Min.
3
30
7
0.8
DTC114EE/DTC114EUA/DTC114ECA
DTC114EKA/DTC114ESA
Digital Transistor(NPN)
Limits (DTC114E)
UA CA KA
50
-10~40
50
100
200
150
-55~150
Unit
SA
V
V
mA
300 mW
Typ Max. Unit
Conditions
0.5
V
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
0.3 V
IO/II=10mA/0.5mA
0.88 mA
VI=5V
0.5 µA
VCC=50V, VI=0
10 13 K
VO=5V ,IO=5mA
1 1.2
250
MHz
VO=10V ,IO=5mA,f=100MHz
Typical Characteristics


Part Number DTC114EE
Description NPN Digital Transistor
Maker LGE
Total Page 2 Pages
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