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LINFINITY
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SG6100 Datasheet Preview

SG6100 Datasheet

DIODE ARRAY CIRCUITS

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SG6100 pdf
SG6100/SG6511
SG6101/SG6510
DIODE ARRAY CIRCUITS
DESCRIPTION
The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,
high breakdown, fast switching speed diode arrays. The SG6100/SG6511
is configured with 7 straight through diodes, while the SG6101/SG6510 has
8 straight through diodes.
These two diode array configurations allow the designer maximum flexibility
for circuit design and board layout. Since each diode within the array has
individual anode and cathode connections the device may be used in a
variety of applications. Also, due to the array's monolithic construction the
diode electrical parameters are very closely matched.
Both devices are available in ceramic DIP and flatpack and can be processed
to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
FEATURES
75V minimum breakdown voltage
100mA current capability per diode
Switching speeds less than 5ns
Low leakage current < 25nA
HIGH RELIABILITY FEATURES
MIL-S-19500/474 QPL - 1N6100
- 1N6101
- 1N6510
- 1N6511
Equivalent JANS, JANTXV, JANTX, JAN
screening available
CIRCUIT DIAGRAMS
6/91 Rev 1.1 2/94
Copyright © 1994
7 - STRAIGHT THROUGH DIODES
SG6100/SG6511
8 - STRAIGHT THROUGH DIODES
SG6101/SG6510
LINFINITY Microelectronics Inc.
1 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570



LINFINITY
LINFINITY

SG6100 Datasheet Preview

SG6100 Datasheet

DIODE ARRAY CIRCUITS

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SG6100 pdf
DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) .................................................... 75V
Output Current (IO), TC = 25°C
Continuous ................................................................. 300mA
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ........... 140°C/W
F Package (16 Pin):
Thermal Resistance-Junction to Case, θJC .................. 70°C/W
Thermal Resistance-Junction to Ambient, θJA ........... 115°C/W
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
Lead Temperature (Soldering, 10 seconds) .................. 300°C
Note A.
Junction Temperature Calculation:
T
J
=
T
A
+
(P
D
x
θJA).
Note B. The above numbers for θJC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The θJA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
RECOMMENDED OPERATING CONDITIONS (Note 3)
Operating Ambient Temperature Range
SG6100 .......................................................... -55°C to 150°C
SG6101 .......................................................... -55°C to 150°C
Note 3. Range over which the device is functional.
SG6511 .......................................................... -55°C to 150°C
SG6510 .......................................................... -55°C to 150°C
ELECTRICAL CHARACTERISTICS
(Unless
otherwise specified, these specifications
apply for the
operating
ambient temperature of T =
A
25°C for each diode.
Low duty cycle pulse
testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Breakdown Voltage (VBR)
Forward Voltage (V )
F
Reverse Current (I )
R
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (t )
rr
(Note 4)
Test Conditions
IR = 5µA, Duty Cycle < 20%
Duty Cycle 2%, 300 µs pulse
IF = 100mA
IF = 10mA, TA = -55°C
V = 20V
R
VR = 40V
VR = 40V, TA = 150°C
V = 0V, f = 1MHz, Pin-to-pin
R
IF = 500mA, tr 15ns, Vfr = 1.8V, RS = 50
IF = IR = 200mA, irr = 20mA, RL = 100
SG6100/SG6511
SG6010/SG6510
Min. Typ. Max.
75
Units
V
1.0 V
1.0 V
25 nA
100 nA
50 µA
4 pf
15 ns
5 ns
Note 4. The parameters, although guaranteed, are not 100% tested in production.
6/91 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
2 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570


Part Number SG6100
Description DIODE ARRAY CIRCUITS
Maker LINFINITY
Total Page 3 Pages
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