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LDTA123EET1G Datasheet Preview

LDTA123EET1G Datasheet

Bias Resistor Transistor

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LDTA123EET1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTA114EET1G Series
PNP Silicon Surface Mount Transistors S-LDTA114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Rating
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Symbol Value Unit
Total Device Dissipation, FR−4 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
PD
RqJA
200 mW
1.6 mW/°C
600 °C/W
Total Device Dissipation, FR−4 Board
(Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rev.B 1/6



LRC
LRC

LDTA123EET1G Datasheet Preview

LDTA123EET1G Datasheet

Bias Resistor Transistor

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LDTA123EET1G pdf
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series,S-LDTA114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
Marking
R1 (K)
LDTA114EET1G
6A 10
LDTA124EET1G
6B 22
LDTA144EET1G
6C 47
LDTA114YET1G
6D 10
LDTA114TET1G
6E 10
LDTA143TET1G
6F 4.7
LDTA123EET1G
6H 2.2
R2 (K)
10
22
47
47
2.2
LDTA143EET1G
43 4.7 4.7
LDTA143ZET1G
6K 4.7 47
LDTA124XET1G
6L 22 47
LDTA123JET1G
6M 2.2 47
LDTA115EET1G
6N 100 100
LDTA144WET1G
6P 47 22
Package
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Symbol
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
Min Typ Max Unit
− − 100 nAdc
− − 500 nAdc
− − 0.5 mAdc
− − 0.2
− − 0.1
− − 0.2
− − 0.9
− − 1.9
− − 2.3
− − 1.5
− − 0.18
− − 0.13
− − 0.2
− − 0.05
− − 0.13
50 −
− Vdc
50 −
− Vdc
Rev.B 2/6


Part Number LDTA123EET1G
Description Bias Resistor Transistor
Maker LRC
Total Page 6 Pages
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