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LDTC115GET3G Datasheet Preview

LDTC115GET3G Datasheet

Bias Resistor Transistor

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LDTC115GET3G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
LDTC115GET1G
3
1
2
SC-89
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC115GET1G
L2
100 3000/Tape & Reel
LDTC115GET3G
L2
100 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
30
82
70
Typ.
100
250
Max.
0.5
58
0.3
130
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=72µA
VCB=50V
VEB=4V
IC=5mA, IB=0.25mA
IC=5mA, VCE=5V
VCE=10V, IE=−5mA, f=100MHz
1/3



LRC
LRC

LDTC115GET3G Datasheet Preview

LDTC115GET3G Datasheet

Bias Resistor Transistor

No Preview Available !

LDTC115GET3G pdf
LESHAN RADIO COMPANY, LTD.
z Electrical characteristic curves
1k
500 VCE=5V
200
100
50
Ta=100°C
Ta=25°C
Ta = −40°C
20
10
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio vs.
collector current characteristics
LDTC115GET1G
1
500m lC/lB=20/1
200m
100m Ta=100°C
Ta=25°C
50m
Ta=−40°C
20m
10m
5m
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs.
collector current characteristics
2/3


Part Number LDTC115GET3G
Description Bias Resistor Transistor
Maker LRC
Total Page 3 Pages
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