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LDTC143EET1G Datasheet Preview

LDTC143EET1G Datasheet

Bias Resistor Transistors

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LDTC143EET1G pdf
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTC114EET1G Series
NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC 100
THERMAL CHARACTERISTICS
Unit
Vdc
Vdc
mAdc
Rating
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage Temperature
Range
Symbol
PD
RqJA
Value
200
1.6
600
Unit
mW
mW/°C
°C/W
PD
RqJA
300 mW
2.4 mW/°C
400 °C/W
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Rev.B 1/9



LRC
LRC

LDTC143EET1G Datasheet Preview

LDTC143EET1G Datasheet

Bias Resistor Transistors

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LDTC143EET1G pdf
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
Marking
R1 (K)
LDTC114EET1G
8A 10
LDTC124EET1G
8B 22
LDTC144EET1G
8C 47
LDTC114YET1G
8D 10
LDTC114TET1G
94 10
LDTC143TET1G
8F 4.7
LDTC123EET1G
8H 2.2
R2 (K)
10
22
47
47
2.2
LDTC143EET1G
8J 4.7 4.7
LDTC143ZET1G
8K 4.7 47
LDTC124XET1G
8L 22 47
LDTC123JET1G
8M 2.2 47
LDTC115EET1G
8N 100 100
LDTC144WET1G
8P 47 22
Package
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
LDTC114EET1G
IEBO
− 0.5 mAdc
LDTC124EET1G
− − 0.2
LDTC144EET1G
− − 0.1
LDTC114YET1G
− − 0.2
LDTC114TET1G
− − 0.9
LDTC143TET1G
− − 1.9
LDTC123EET1G
− − 2.3
LDTC143EET1G
− − 1.5
LDTC143ZET1G
− − 0.18
LDTC124XET1G
− − 0.13
LDTC123JET1G
− − 0.2
LDTC115EET1G
− − 0.05
LDTC144WET1G
− − 0.13
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
50
50
− Vdc
− Vdc
Rev.B 2/9


Part Number LDTC143EET1G
Description Bias Resistor Transistors
Maker LRC
Total Page 9 Pages
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