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MUN5112DW1T1 Datasheet Preview

MUN5112DW1T1 Datasheet

(MUN5111DW1T1 Series) Dual Bias Resistor Transistors

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MUN5112DW1T1 pdf
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MUN5111DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V CBO
–50
V CEO
–50
www.DataSheet4U.com
I C –100
Vdc
Vdc
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJA
R θJL
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
XX
1 23
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
MUN5111dw–1/11



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MUN5112DW1T1 Datasheet

(MUN5111DW1T1 Series) Dual Bias Resistor Transistors

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MUN5112DW1T1 pdf
LESHAN RADIO COMPANY, LTD.
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package Marking R 1(K) R 2(K)
Shipping
MUN5111DW1T1
SOT–363
0A
10 10 3000/Tape & Reel
MUN5112DW1T1
SOT–363
0B
22 22 3000/Tape & Reel
MUN5113DW1T1
SOT–363
0C
47 47 3000/Tape & Reel
MUN5114DW1T1
SOT–363
0D
10 47 3000/Tape & Reel
MUN5115DW1T1 (Note 3.) SOT–363
0E
10
– 3000/Tape & Reel
MUN5116DW1T1 (Note 3.) SOT–363
0F
4.7 – 3000/Tape & Reel
MUN5130DW1T1 (Note 3.) SOT–363
0G
1.0 1.0 3000/Tape & Reel
MUN5131DW1T1 (Note 3.) SOT–363
0H
2.2 2.2 3000/Tape & Reel
MUN5132DW1T1 (Note 3.) SOT–363
0J
4.7 4.7 3000/Tape & Reel
MUN5133DW1T1 (Note 3.) SOT–363
0K
4.7 47 3000/Tape & Reel
MUN5134DW1T1 (Note 3.) SOT–363
0L
22 47 3000/Tape & Reel
MUN5135DW1T1 (Note 3.) SOT–363
0M
2.2 47 3000/Tape & Reel
MUN5136DW1T1 (Note 3.) SOT–363
0N
100 100 3000/Tape & Reel
MUN5137DW1T1 (Note 3.) SOT–363
0P
47 22 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = –50 V, I E = 0) I CBO – – –100 nAdc
Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)
Emitter-Base Cutoff Current MUN5111DW1T1
I CEO
I EBO
– – –500 nAdc
– – –0.5 mAdc
(V EB = –6.0 V, I C = 0)
MUN5112DW1T1
MUN5113DW1T1
– – –0.2
– – –0.1
MUN5114DW1T1
– – –0.2
MUN5115DW1T1
– – –0.9
MUN5116DW1T1
– – –1.9
MUN5130DW1T1
– – –4.3
MUN5131DW1T1
– – –2.3
MUN5132DW1T1
– – –1.5
MUN5133DW1T1
– – –0.18
MUN5134DW1T1
– – –0.13
MUN5135DW1T1
– – –0.2
MUN5136DW1T1
– – –0.05
MUN5137DW1T1
– – –0.13
Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0)
V (BR)CBO
–50
– Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO –50
– Vdc
ON CHARACTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA)
(I C= –10mA, I B= –5mA) MUN5130DW1T1/MUN5131DW1T1
(I C= –10mA, IB= –1mA) MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
V CE(sat)
– –0.25 Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN5111dw–2/11


Part Number MUN5112DW1T1
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Maker LRC
Total Page 11 Pages
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