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Leshan Radio Company
Leshan Radio Company

L2N7002WT3G Datasheet Preview

L2N7002WT3G Datasheet

Small Signal MOSFET

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L2N7002WT3G pdf
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT–323
FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
L2N7002WT1G
6C
L2N7002WT3G
6C
MAXIMUM RATINGS(Ta = 25)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VDSS
VDGR
Value
60
60
Drain Current
– Continuous TC = 25C (Note 1.)
TC = 100C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 s)
ID
ID
IDM
VGS
VGSM
±115
±75
±800
±20
±40
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Unit
Vdc
Vdc
mAdc
Simplified Schematic
Gate 1
3 Drain
Source 2
Vdc
Vpk
(Top View)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25C
PD
225 mW
Derate above 25C
1.8 mW/C
Thermal Resistance, Junction to Ambient RθJA 556 C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25C
Derate above 25C
PD
300 mW
2.4 mW/C
Thermal Resistance, Junction to Ambient Rθ JA 417 C/W
Junction and Storage Temperature
TJ, Tstg -55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4



Leshan Radio Company
Leshan Radio Company

L2N7002WT3G Datasheet Preview

L2N7002WT3G Datasheet

Small Signal MOSFET

No Preview Available !

L2N7002WT3G pdf
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
T J = 25
TJ = 125
(VGS = 20 Vdc)
V(BR)DSS 60 – – Vdc
IDSS – – 1.0 μAdc
– – 500
IGSSF – –
1 μAdc
Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc)
IGSSR
-1 μAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250uAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
T C = 25
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 125
T C = 25
TC = 125
Forward Transconductance
(VDS2.0 VDS(on), ID = 200 mAdc)
VGS(th) 1.0 1.6 2.5
ID(on) 500
Vdc
mA
VDS(on)
Vdc
3.75
0.375
rDS(on)
Ohms
1.4 7.5
– – 13.5
1.8 7.5
– – 13.5
gFS 80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss 17 50 pF
Coss 10 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss 2.5 5.0 pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time (V DD = 25 Vdc , ID =500 mAdc, RG =
Turn–Off Delay Time 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0 V)
Source Current Continuous (Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
td(on) 7 20
td(off) 11 40
ns
ns
VSD – – –1.5 Vdc
IS – – –115 mAdc
ISM – – –800 mAdc
May,2015
Rev.A 3/4


Part Number L2N7002WT3G
Description Small Signal MOSFET
Maker Leshan Radio Company
Total Page 4 Pages
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