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Leshan Radio Company
Leshan Radio Company

L8550HQLT3G Datasheet Preview

L8550HQLT3G Datasheet

General Purpose Transistors

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L8550HQLT3G pdf
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽPNP complement: L8550H
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1G
s-L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G
L8550HQLT1G
s-L8550HPLT3G
s-L8550HQLT1G
1HB
1HD
10000/Tape&Reel
3000/Tape&Reel
L8550HQLT3G
L8550HRLT1G
s-L8550HQLT3G
s-L8550HRLT1G
1HD
1HF
10000/Tape&Reel
3000/Tape&Reel
L8550HRLT3G
L8550HSLT1G
s-L8550HRLT3G
s-L8550HSLT1G
1HF
1HH
10000/Tape&Reel
3000/Tape&Reel
L8550HSLT3G
s-L8550HSLT3G 1HH
10000/Tape&Reel
L8550HPLT1G
Series
S-L8550HPLT1G
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Max
-25
-40
-5
-1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
PD
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
Rev.A 1/3



Leshan Radio Company
Leshan Radio Company

L8550HQLT3G Datasheet Preview

L8550HQLT3G Datasheet

General Purpose Transistors

No Preview Available !

L8550HQLT3G pdf
LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
Series
S-L8550HPLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
V(BR)CEO
-25
Emitter-Base Breakdown Voltage
(IE=-100 µΑ)
V(BR)EBO
-5
Collector-Base Breakdown Voltage
(IC=-100 µΑ)
V(BR)CBO
-40
Collector Cutoff Current (VCB=-35V)
ICBO
Emitter Cutoff Current (VEB=-4V)
IEBO – –
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
-150
-150
V
V
V
nA
nA
Max
Unit
DC Current Gain
IC=-100mA,VCE=-1V
Collector-Emitter Saturation Voltage
(IC=-800mA,I B =-80mA)
HFE
VCE(S)
100
-
- 600
- -0.5 V
NOTE :
*
P
hFE 100~200
Q
150~300
R
200~400
S
300~600
Rev.A 2/3


Part Number L8550HQLT3G
Description General Purpose Transistors
Maker Leshan Radio Company
Total Page 3 Pages
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