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Leshan Radio Company
Leshan Radio Company

LBC847BPDW1T1 Datasheet Preview

LBC847BPDW1T1 Datasheet

(LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals

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LBC847BPDW1T1 pdf
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNPwww.datasheet4u.com Duals (Complimentary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
• Device Marking:
LBC846BPDW1T1 = BB
LBC847BPDW1T1 = 13F
LBC847CPDW1T1 = 13G
LBC848BPDW1T1 = 13K
LBC848CPDW1T1 = 13L
LBC846BPDW1T1
LBC847BPDW1T1
LBC847CPDW1T1
LBC848BPDW1T1
LBC848CPDW1T1
6
5
4
1
2
3
SOT-363/SC-88
CASE 419B STYLE 1
MAXIMUM RATINGS - NPN
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
65
45
30
V
VCBO
80
50
30
V
VEBO 6.0 6.0 5.0
V
IC 100 100 100 mAdc
MAXIMUM RATINGS - PNP
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Ð
Continuous
VCEO
VCBO
VEBO
IC
-65
-80
-5.0
-100
-45
-50
-5.0
-100
-30
-30
-5.0
-100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR-5 Board (1)
TA = 25˚C
Derate Above 25˚C
PD
Thermal Resistance,
Junction to Ambient
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR-5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
-55 to +150
Unit
mW
mW/˚C
˚C/W
˚C
3 21
Q1 Q2
45
6
DEVICE MARKING
See Table
ORDERING INFORMATION
Device
Package
Shipping
LBC846BPDW1T1 SOT-363 3000 Units/Reel
LBC847BPDW1T1 SOT-363 3000 Units/Reel
LBC847CPDW1T1 SOT-363 3000 Units/Reel
LBC848BPDW1T1 SOT-363 3000 Units/Reel
LBC848CPDW1T1 SOT-363 3000 Units/Reel
LBC846BP - 1/9



Leshan Radio Company
Leshan Radio Company

LBC847BPDW1T1 Datasheet Preview

LBC847BPDW1T1 Datasheet

(LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals

No Preview Available !

LBC847BPDW1T1 pdf
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1, LBC847BPDW1T1 Series, LBC848BPDW1T1 Series
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)CEO
65 — —
45 — —
30 — —
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847B Only
LBC848 Series
V(BR)CES
80 — —
50 — —
30 — —
Collector–Base Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)CBO
80 — —
50 — —
30 — —
Emitter–Base Breakdown Voltage
(IE = 1.0 mA)
LBC846 Series
LBC847 Series
LBC848 Series
V(BR)EBO
6.0
6.0
5.0
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO — — 15
— — 5.0
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
hFE
— 150 —
— 270 —
(IC = 2.0 mA, VCE = 5.0 V)
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
200 290 475
420 520 800
VCE(sat)
— 0.25
— 0.6
VBE(sat)
0.7
— 0.9 —
VBE(on)
580
660
700
— — 770
fT
100 —
Cobo — — 4.5
NF
— — 10
Unit
V
V
V
V
nA
µA
V
V
mV
MHz
pF
dB
LBC846BP–2/9


Part Number LBC847BPDW1T1
Description (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals
Maker Leshan Radio Company
Total Page 9 Pages
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