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Leshan Radio Company
Leshan Radio Company

LBC857AWT1G Datasheet Preview

LBC857AWT1G Datasheet

(LBC85xxWT1G) General Purpose Transistors PNP Silicon

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LBC857AWT1G pdf
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G
CWT1G
3
1
2
SOT– 323 / SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
Collector–Base Breakdown Voltage
(IC = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65 —
V (BR)CEO
– 45
v
– 30 —
– 80 —
V (BR)CES
– 50
v
– 30 —
– 80 —
V (BR)CBO
– 50
v
– 30 —
– 5.0
V (BR)EBO
– 5.0
v
– 5.0
I CBO — — – 15 nA
— — – 4.0 µA
1/6



Leshan Radio Company
Leshan Radio Company

LBC857AWT1G Datasheet Preview

LBC857AWT1G Datasheet

(LBC85xxWT1G) General Purpose Transistors PNP Silicon

No Preview Available !

LBC857AWT1G pdf
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
(I C = –2.0 mA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz)
Noise Figure
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 k, f =1.0 kHz, BW= 200 Hz)
h FE
V CE(sat)
V BE(sat)
V BE(on)
fT
Cob
NF
125
220
420
– 0.6
100
––
ORDERING INFORMATION ( Pb– Free )
Device
Package
LBC856AWT1G_S
SOT-23
LBC856AWT3G_S
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Typ Max Unit
90
150
270
180
290
520
– 0.7
– 0.9
250
475
800
– 0.3
– 0.65
– 0.75
– 0.82
V
V
V
— — MHz
— 4.5 pF
–– 10 dB
2/6


Part Number LBC857AWT1G
Description (LBC85xxWT1G) General Purpose Transistors PNP Silicon
Maker Leshan Radio Company
Total Page 6 Pages
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