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Leshan Radio Company
Leshan Radio Company

LBSS138LT3G Datasheet Preview

LBSS138LT3G Datasheet

Power MOSFET

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LBSS138LT3G pdf
LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers,printers,
PCMCIA cards, cellular and cordless telephones.
LBSS138LT1G
S-LBSS138LT1G
FEATURES
1)Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2)Miniature SOT–23 Surface Mount Package saves board space
3)Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
4)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
5) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LBSS138LT1G
J1
LBSS138LT3G
J1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT– 23 (TO–236AB)
200 mAMPS
50 VOLTS
R DS(on) = 3.5 W
N - Channel
3
1
MAXIMUM RATINGS(Ta = 25unless otherwise noted))
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Symbol
VDSS
VGS
Value
50
20
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 s)
ID 200
IDM 800
Unit
Vdc
Vdc
mA
Total Power Dissipation @ TA = 25C
PD 225 mW
Operating and Storage Temperature Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TJ, Tstg
RθJA
TL
– 55 to 150 C
556 C/W
260 C
2
June,2015
Rev.A 1/4



Leshan Radio Company
Leshan Radio Company

LBSS138LT3G Datasheet Preview

LBSS138LT3G Datasheet

Power MOSFET

No Preview Available !

LBSS138LT3G pdf
LESHAN RADIO COMPANY, LTD.
LBSS138LT1G,S-LBSS138LT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40C to +85C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Symbol Min. Typ. Max. Unit
V(BR)DSS 50
IDSS
IGSS
– – Vdc
Adc
0.1
0.5
0.1 Adc
VGS(th) 0.5 1.5 Vdc
rDS(on)
Ohms
5.6 10
– – 3.5
gfs 100 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Crss
Turn–On Delay Time
Turn–Off Delay Time (V DD = 30 Vdc , ID =200 mAdc
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
td(on)
td(off)
2. Switching characteristics are independent of operating junction temperature.
40 50
12 25 pF
3.5 5.0
– – 20 ns
– – 20 ns
June,2015
Rev.A 2/4


Part Number LBSS138LT3G
Description Power MOSFET
Maker Leshan Radio Company
Total Page 4 Pages
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