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Leshan Radio Company
Leshan Radio Company

LMBD301LT1G Datasheet Preview

LMBD301LT1G Datasheet

Schottky Barrier Diodes

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LMBD301LT1G pdf
LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications.They are readily adaptable to many other fast switching RF and digital
applications.They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements.They are also
available in a Surface Mount package.
EXtremely Low Minority Carrier Lifetime –15ps(Typ)
Very Low Capacitance –1.5pF(Max)@VR=15V
Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301
We declare that the material of product
compliance with RoHS requirements.
3
CATHODE
1
ANODE
LMBD301LT1G
3
1
2
SOT–23
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@TA=25 °C
Derate above 25 °C
Operating Junction
Temperature Range
Storage Temperature Range
symbol
VR
PF
TJ
T stg
value
30
280 200
2.8 2.0
–55 to +125
–55 to +150
unit
Volts
mW
mW/ °C
°C
°C
DEVICE MARKING
LMBD301LT1G= 4T
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage(IR=10µA)
V (BR)R
30
Total Capacitance(VR=15V,f=1.0MHz,)Figure1
CT
Reverse Leakage(VR=25V)Figure3
IR
Forward Voltage(IF=1.0mAdc)Figure4
VF
Forward Voltage(IF=10mAdc)Figure4
VF
Typ
0.9
13
0.38
0.52
Max
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
NOTE:LMBD301LT1G is also available in bulk packaging.Use LMBD301LT1G as the device title to order this device in bulk.
Ordering Information
Device
LMBD301LT1G
LMBD301LT3G
Marking
4T
4T
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/3



Leshan Radio Company
Leshan Radio Company

LMBD301LT1G Datasheet Preview

LMBD301LT1G Datasheet

Schottky Barrier Diodes

No Preview Available !

LMBD301LT1G pdf
LESHAN RADIO COMPANY, LTD.
LMBD301LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
f =1.0MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15
18 21 24
27 30
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
10
T A = 100°C
1.0
75°C
0.1
0.01 25°C
0.001
0
6.0 12 18 24
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
30
500
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
I F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
10
TA = 85°C
T A= –40°C
1.0
T A = 25°C
0.1
0.2
0.4 0.6
0.8 1.0
V F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
1.2
SINUSOIDAL
GENERATOR
I F(PEAK)
CAPACITIVE
CONDUCTION
I R(PEAK)
FORWARD
CONDUCTION
BALLAST
NETWORK
(PADS)
DUT
STORAGE
CONDUCTION
PADS
SAMPLING
OSCILLOSCOPE
(50 INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
Rev.O 2/3


Part Number LMBD301LT1G
Description Schottky Barrier Diodes
Maker Leshan Radio Company
Total Page 3 Pages
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LMBD301LT1G pdf
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