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Leshan Radio Company
Leshan Radio Company

LMBT3906DW1T1G Datasheet Preview

LMBT3906DW1T1G Datasheet

Dual Bias Resistor Transistors PNP Silicon

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LMBT3906DW1T1G pdf
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
FEATURES
1hFE, 100–300
2Low VCE(sat),0.4 V
3Simplifies Circuit Design
4Reduces Board Space
5Reduces Component Count
6We declare that the material of product compliant with
RoHS requirements and Halogen Free.
7S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBT3906DW1T1G
S-LMBT3906DW1T1G
65 4
1
2
3
SOT-363
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906DW1T1G
A2 3000/Tape&Reel
LMBT3906DW1T3G
A2 10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation,
PD 150 mW
(Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
RΘJA
833 /W
Junction and Storage
temperature
TJ,Tstg −55+150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.A 1/6



Leshan Radio Company
Leshan Radio Company

LMBT3906DW1T1G Datasheet Preview

LMBT3906DW1T1G Datasheet

Dual Bias Resistor Transistors PNP Silicon

No Preview Available !

LMBT3906DW1T1G pdf
LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G,S-LMBT3906DW1T1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 μAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 μAdc, I C = 0)
Collector Cutoff Current
( V CE = –30 Vdc, V EB =– 3.0Vdc)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0Vdc)
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
ICEX
IBL
Min.
–40
–40
–5
Typ.
Max.
–50
–50
Unit
V
V
V
nA
nA
ON CHARACTERISTICS (Note 1.)
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE =– 1.0 Vdc)
(I C = –100 mAdc, V CE =– 1.0 Vdc)
Collector–Emitter Saturation Voltage(3)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
60
80
100
60
30
–0.65
300
–0.25
–0.4
–0.85
–0.95
V
V
Characteristic
Symbol Min. Typ. Max.
Unit
Current–Gain — Bandwidth Product
fT
MHz
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
250
Output Capacitance
Cobo
pF
(V CB = –5.0 Vdc, I E = 0, f = 1.0 MHz)
– – 4.5
Input Capacitance
Cibo
pF
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
– – 10
Input Impedance
hie
k
(V CE=– 10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
2 12
Voltage Feedback Ratio
hre
X 10 –4
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
0.1
10
Small–Signal Current Gain
hfe
(V CE=–10 Vdc, I C =– 1.0 mAdc, f = 1.0 kHz)
100 400
Output Admittance
hoe
μmhos
(V CE=–10 Vdc, I C =–1.0 mAdc, f = 1.0 kHz)
3 60
Noise Figure
(VCE=–5V, IC=–100μA, RS=1.0k , f =1.0kHz)
3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
NF
––
dB
4
June,2015
Rev.A 2/6


Part Number LMBT3906DW1T1G
Description Dual Bias Resistor Transistors PNP Silicon
Maker Leshan Radio Company
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