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Leshan Radio Company
Leshan Radio Company

LRB411DLT1G Datasheet Preview

LRB411DLT1G Datasheet

Schottky Barrier Diodes

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LRB411DLT1G pdf
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB411DLT1G
zApplications
Low current rectification
LRB411DLT1G
3
zFeatures
1) Small mold type. (SOT-23)
2) Low IR
3) High reliability.
zConstruction
Silicon epitaxial planar
z We declare that the material of product
compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current*1
Forward current s urge peak 60Hz1cyc)(*1
Junction tem perature
Storage tem perature
(*1) Rating of per diode
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
Lim its
40
20
500
3
125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Param eter
Forwarad voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
VF1 - - 0.50
VF2 - - 0.30
IR1 - - 30
Ct1 - 20 -
1
2
SOT– 23
3
CATHODE
1
ANODE
Unit
V
V
mA
A
Unit Conditions
V IF=500m A
V IF=10m A
µA VR=10V
pF VR=10V , f=1MHz
z Device marking and ordering information
Device
Marking
LRB411DLT1G
D3E
LRB411DLT3G
D3E
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/4



Leshan Radio Company
Leshan Radio Company

LRB411DLT1G Datasheet Preview

LRB411DLT1G Datasheet

Schottky Barrier Diodes

No Preview Available !

LRB411DLT1G pdf
LESHAN RADIO COMPANY, LTD.
LRB411DLT1G
Electrical characteristic curves (Ta = 25°C)
1000
100
Ta= 2 5 ℃
Ta= 7 5 ℃
Ta= 1 2 5 ℃
10
1
Ta= - 2 5 ℃
10000
1000
100
10
1
0.1
0
100 200 300 400
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
500
0.1
0
Ta= 1 2 5 ℃
Ta= 7 5 ℃
Ta= 2 5 ℃
100
10
Ta= - 2 5 ℃
10 20
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
1
0
f=1MHz
10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
430 250
Ta= 2 5 ℃
IF= 5 0 0 m A
420
n = 3 0 pc s
240
410 230
400
390
380
A V E:405.6mV
σ:3.0258mV
AVE:402.4mV
220
210
200
Ta= 2 5 ℃
IF= 1 0 m A
n = 3 0 pc s
A V E:2 1 8 .0 m V
20
18
16
14
12
10
8
6
4
2
0
Ta= 2 5 ℃
VR=10V
n = 3 0 pc s
AVE:4.67uA
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
25 20
24 Ta=25℃
f=1MHz
23 VR=0V
22
n = 1 0 pc s
15
21
20 10
19
18
17 AVE:18.35pF
16
15
5
0
Ifsm 1cyc
8 .3 m s
AVE:5.70A
30
25
20
15
10
5
0
Ta= 2 5 ℃
IF= 0 .5 A
IR = 1 A
Irr= 0 .2 5 * IR
n = 1 0 pc s
AVE:6.20ns
Ct DISPERSION MAP
IFSM DISRESION MAP
trr DISPERSION MAP
10
Ifsm
8.3ms 8.3ms
1 c yc
5
0
1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
15
10
5
0
0.1
Ifsm
t
1 10
TIM E:t(m s)
100
IFSM-t CHARACTERISTICS
1000
100
10
1000
1
0.001
R th ( j- a)
R th ( j- c )
Mounted on epoxy board
IM=1mA
IF=10mA
1ms time
300us
0.1 10
TIM E:t( s)
Rth-t CHARACTERISTICS
1000
Rev.O 2/4


Part Number LRB411DLT1G
Description Schottky Barrier Diodes
Maker Leshan Radio Company
Total Page 4 Pages
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